公开(公告)号：US20070119257A1

公开(公告)日：2007-05-31

申请号：US11594532

申请日：2006-11-08

申请人： Junichi Hayasaka ,  Kazumi Tanaka ,  Atsushi Sasaki ,  Chieko Fujiwara ,  Yoshiaki Ikeda ,  Toru Miura ,  Hiroshi Machida

发明人： Junichi Hayasaka ,  Kazumi Tanaka ,  Atsushi Sasaki ,  Chieko Fujiwara ,  Yoshiaki Ikeda ,  Toru Miura ,  Hiroshi Machida

IPC分类号： G01H11/08

CPC分类号： G01H11/08

摘要： A vibration detection system comprises a battery-less vibration sensor and an interrogator. The sensor comprises a single port surface acoustic wave resonator. The interrogator continuously transmits a carrier wave signal to the resonator while receiving a wave signal reflected from the resonator. The reflected wave signal includes components other than the transmitted carrier wave signal if the sensor senses a vibration event. Based the reflected wave signal, the interrogator judges whether the vibration event occurs.

摘要翻译： 一种振动检测系统，包括无电池振动传感器和询问器。 传感器包括单端口声表面波谐振器。 询问器在接收到从谐振器反射的波信号的同时，向谐振器连续传输载波信号。 如果传感器感测到振动事件，则反射波信号包括除了发送的载波信号之外的分量。 基于反射波信号，询问器判断是否发生振动事件。

公开(公告)号：US07255775B2

公开(公告)日：2007-08-14

申请号：US10603781

申请日：2003-06-26

申请人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

发明人： Masanari Yokogawa ,  Hirotaka Hagihara ,  Shinya Wagatsuma ,  Koutarou Kitayama ,  Chieko Fujiwara

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01L21/6875 ,  H01L21/68757

摘要： There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 μm to 1.3 μm.

摘要翻译： 提供了一种半导体晶片处理构件，其中防止其滑动的发生，并且其具有对半导体晶片的足够的内聚性和优异的耐久性。 本发明的半导体晶片处理元件A至少具有在其上形成有碳化硅（SiC）膜的表面，包括用于接收半导体晶片的支撑部分，所述支撑部分由所述半导体晶片基本上来自 接触; 和由碳化硅（SiC）膜形成的凹陷以提供所述凸起之间的覆盖区域，所述凸起形成为表面粗糙度Ra为0.05μm至1.3μm的顶表面。