公开(公告)号：US4725873A

公开(公告)日：1988-02-16

申请号：US882456

申请日：1986-07-08

申请人： Junichi Nishizawa ,  Takashige Tamamushi ,  Sobei Suzuki

发明人： Junichi Nishizawa ,  Takashige Tamamushi ,  Sobei Suzuki

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/359 ,  H01L27/14 ,  H04N3/14

CPC分类号： H01L27/14679

摘要： A semiconductor imaging device composed of a matrix of pixels, each pixel being implemented with a single static induction transistor. Each static induction transistor includes a pair of principal electrode regions disposed facing each other through a highly resistive channel region. First and second gate regions of the conduction type opposite that of the principal electrode regions is formed in contact with the channel region and used to control the current flow between the two principal electrode regions. A capacitor is formed on at least part of the first gate region, whereby carriers generated by light exitation are stored in the first gate region. The second gate region is formed surrounding the first gate region and is common to all pixels. This construction provides a high-level output signal and good isolation between pixels, with an attendant increase in blooming resistance.

摘要翻译： 由像素矩阵构成的半导体成像装置，每个像素由单个静态感应晶体管实现。 每个静态感应晶体管包括通过高电阻沟道区域彼此相对设置的一对主电极区域。 与主电极区域相反的导电类型的第一和第二栅极区域形成为与沟道区域接触，并用于控制两个主电极区域之间的电流。 在第一栅极区域的至少一部分上形成电容器，由此由光照射产生的载流子存储在第一栅极区域中。 第二栅极区域围绕第一栅极区域形成，并且对于所有像素是共同的。 这种结构提供了高电平输出信号和像素之间的良好隔离，伴随着起霜电阻的增加。

公开(公告)号：US4536946A

公开(公告)日：1985-08-27

申请号：US561103

申请日：1983-12-13

申请人： Junichi Nishizawa ,  Sobei Suzuki ,  Takashige Tamamushi

发明人： Junichi Nishizawa ,  Sobei Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/146 ,  H01L29/10 ,  H01L31/10 ,  H01L21/22

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14679 ,  H01L29/1066

摘要： A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.

摘要翻译： 半导体光电检测器和半导体光电检测器的制造方法，其屏蔽栅极区域与漏极或源极区域隔离，其间仅具有小的结电容。 光电探测器用垂直静电感应晶体管实现。 在静电感应晶体管中，在硅晶片的第一主表面上形成控制栅极区域。 屏蔽栅极区域形成在围绕控制栅极区域的主表面上。 至少一个第一主电极区域形成在控制区域和屏蔽栅极区域之间的第一主表面上。 第二主电极区域形成在晶片的与第一主电极区域相对的一侧的第二主表面上。 屏蔽栅极区域形成在硅晶片的比第一主电极区域更深的位置处。

公开(公告)号：US4719499A

公开(公告)日：1988-01-12

申请号：US882454

申请日：1986-07-08

申请人： Junichi Nishizawa ,  Takashige Tamamushi ,  Sobei Suzuki

发明人： Junichi Nishizawa ,  Takashige Tamamushi ,  Sobei Suzuki

IPC分类号： H01L29/80 ,  H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H01L27/14 ,  H04N3/14

CPC分类号： H01L27/14679

摘要： A semiconductor imaging device employing SIT (Static Induction Transistor) pixels having in the control gate region of each pixel a capacitor having optimum properties. Each pixel is constituted by an SIT having a pair of principal electrode regions of one conduction type facing one another through a highly resistive channel region. First and second gate regions of the other conduction type in contact with the channel region control the current flow between the two principal electrode regions. A transparent electrode is formed on at least part of the first gate region through a capacitor. Carriers generated by light excitation stored in the first gate region effectively control the current flow between the principal regions. A transparent electrically conductive layer is formed on the first gate region of each SIT through a nitride layer. The conductive layer serves as an electrode to connect the first gate region to the output of a gate control circuit.

摘要翻译： 一种使用SIT（静电感应晶体管）像素的半导体成像装置，其具有在每个像素的控制栅极区域中具有最佳特性的电容器。 每个像素由具有一对导电类型的一对主电极区域的SIT构成，通过高电阻沟道区域彼此相对。 与通道区域接触的另一导电类型的第一和第二栅极区域控制两个主电极区域之间的电流。 透明电极通过电容器形成在第一栅极区域的至少一部分上。 存储在第一栅极区域中的由光激发产生的载流子有效地控制主要区域之间的电流。 通过氮化物层在每个SIT的第一栅极区域上形成透明导电层。 导电层用作将第一栅极区域连接到栅极控制电路的输出的电极。

公开(公告)号：US4684966A

公开(公告)日：1987-08-04

申请号：US745972

申请日：1985-07-16

申请人： Junichi Nishizawa ,  Sobei Suzuki ,  Takashige Tamamushi

发明人： Junichi Nishizawa ,  Sobei Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/146 ,  H01L29/10 ,  H01L31/10 ,  H01L29/80 ,  H01L27/14

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14679 ,  H01L29/1066

摘要： A semiconductor photodetector, and a process for producing a semiconductor photodetector, having a shielding gate region isolated from drain or source regions with only a small junction capacitance therebetween. The photodetector is implemented with a vertical static induction transistor. In the static induction transistor, a control gate region is formed on a first principal surface of a silicon wafer. The shielding gate region is formed on the principal surface surrounding the control gate region. At least one first principal electrode region is formed on the first principal surface between the control region and the shielding gate region. A second principal electrode region is formed on a second principal surface of the wafer on the side thereof opposite the first principal electrode region. The shielding gate region is formed in the silicon wafer at a position deeper than the first principal electrode region.

摘要翻译： 半导体光电检测器和半导体光电检测器的制造方法，其屏蔽栅极区域与漏极或源极区域隔离，其间仅具有小的结电容。 光电探测器用垂直静电感应晶体管实现。 在静电感应晶体管中，在硅晶片的第一主表面上形成控制栅极区域。 屏蔽栅极区域形成在围绕控制栅极区域的主表面上。 至少一个第一主电极区域形成在控制区域和屏蔽栅极区域之间的第一主表面上。 第二主电极区域形成在晶片的与第一主电极区域相对的一侧的第二主表面上。 屏蔽栅极区域形成在硅晶片的比第一主电极区域更深的位置处。