摘要:
Provided is a matching circuit, radio-frequency power amplifier, and mobile phone whereby the second harmonic can be suppressed and the loss of fundamental due to the self resonant frequency of components can be reduced. The output matching circuit includes: a transmission line through which a radio-frequency signal is transmitted; and resonators each of which includes a capacitor. The resonators respectively have (i) first terminals connected to substantially a same connecting point on the transmission line and (ii) second terminals that are grounded.
摘要:
A radio frequency signal is input to the bases of transistors via respective capacitors, is amplified, and is output from the collectors of the transistors. The emitter of each transistor is grounded. A bias current input from a bias circuit is supplied to the bases of the transistors via respective resistors both during low-output operation and during high-output operation. The collectors of the transistors are connected via an impedance circuit to a bias voltage input terminal. Therefore, during high-output operation, a direct current offset voltage is generated by the impedance circuit based on a portion of a radio frequency signal output from the collectors, thereby further increasing the bias current.
摘要:
A radio frequency circuit according to the present invention, is a radio frequency circuit for amplifying a radio frequency signal, the radio frequency circuit comprising: an amplifier circuit for amplifying the radio frequency signal and outputting an amplified signal obtained by the amplification of the radio frequency signal; a load circuit connected to an output of the amplifier circuit; a plurality of transmission lines; a selection circuit for selecting a transmission line among the plurality of transmission lines in accordance with a predetermined parameter of the amplified signal so as to connect the selected transmission line to an output of the load circuit; and a conversion circuit for converting, into a predetermined load impedance, a load impedance looking from the amplifier circuit toward an output side of the amplifier circuit, the conversion being performed in the transmission line selected by the selection circuit.
摘要:
A bias circuit operable to supply a bias current to a first transistor includes: a second transistor having a collector terminal connected to a first power supply; a first resistance element having one end connected to an emitter terminal of the second transistor and having the other end connected to a base terminal of the first transistor; a second resistance element having one end connected to the emitter terminal of the second transistor and having the other end connected to ground potential; at least one third resistance element provided between a base terminal of the second transistor and a second power supply; and a plurality of temperature compensation circuits connected to the base terminal of the second transistor which are operable to control a base potential of the second transistor so that the potential falls as a temperature rises.
摘要:
An RF power amplifier according to the present invention includes: an RF power amplifying element, a first switch provided in a first transmission path for transmitting a first RF signal output from the RF power amplifying element, a second transmission unit which transmits a second RF signal of higher frequency than the first RF signal output from the RF power amplifying element, and a second second-order harmonic trap circuit connected to an output terminal, and the second transmission unit includes a grounded capacitor, a second transmission path, a Band-I matching circuit, a second switch connected in series to the second transmission path, and the second switch connects the second transmission path to the grounded capacitor when the first RF signal is amplified, and connects the second transmission path to the Band-I matching circuit when the second RF signal is amplified.