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    DOHERTY AMPLIFIER
    1.
    发明公开
    DOHERTY AMPLIFIER 审中-公开

    公开(公告)号：US20240204731A1

    公开(公告)日：2024-06-20

    申请号：US18595818

    申请日：2024-03-05

    申请人： Mitsubishi Electric Corporation

    发明人： Shuichi SAKATA ,  Marie TAGUCHI ,  Yuji KOMATSUZAKI

    IPC分类号： H03F1/02 ,  H03F1/56 ,  H03F3/21

    CPC分类号： H03F1/0288 ,  H03F1/56 ,  H03F3/211 ,  H03F2200/423 ,  H03F2200/48 ,  H03F2203/21139

    摘要： A Doherty amplifier including: a first transistor for main amplifier having a source-to-drain parasitic capacitance and operating in class AB; a transmission line whose input end is connected to an output end of the first transistor and whose output end is connected to a composite point; a second transistor for auxiliary amplifier having a source-to-drain parasitic capacitance and operating in class C; a series capacitor whose input end is connected to an output end of the second transistor and whose output end is connected to the composite point, and to reduce the capacitance value of impedance seen from the composite point toward the output end of the second transistor at the time of a backoff operation; and an output matching circuit connected between the composite point and a point of connection to an output load, to match the impedance of the composite point to the impedance of the output load.

    AMPLIFIER WITH AMPLIFICATION STAGES CONNECTED IN PARALLEL
    3.
    发明申请
    AMPLIFIER WITH AMPLIFICATION STAGES CONNECTED IN PARALLEL 审中-公开

    公开(公告)号：US20190207574A1

    公开(公告)日：2019-07-04

    申请号：US16177552

    申请日：2018-11-01

    申请人： FUJITSU LIMITED

    发明人： Naoko Kurahashi ,  Masaru Sato

    IPC分类号： H03F3/60 ,  H03F3/193 ,  H03F3/24

    CPC分类号： H03F3/601 ,  H03F3/193 ,  H03F3/245 ,  H03F2200/255 ,  H03F2200/423 ,  H03F2200/543

    摘要： An amplifier includes amplification stages connected in parallel between an input point and an output point and a feedback circuit, wherein the amplification stages each include a transistor configured to amplify a signal supplied from the input point, a harmonic processing unit configured to process harmonics present in an amplified signal output from an output node of the transistor, a connection point between the output node and the harmonic processing unit, and a transmission line connecting the connection point and the output point, wherein the feedback circuit feeds back a signal at the output point or a midway point of the transmission line of a given one of the amplification stages to a first end of a resistor connected to the connection point of the given one of the amplification stages, a second end of the resistor being connected to the connection point of another one of the amplification stages.

    INVERSE CLASS-F POWER AMPLIFIER
    4.
    发明申请
    INVERSE CLASS-F POWER AMPLIFIER 审中-公开

    公开(公告)号：US20190131940A1

    公开(公告)日：2019-05-02

    申请号：US16093032

    申请日：2017-04-13

    申请人： Cape Peninsula University of Technology

    发明人： Safari Mugisho Moise ,  Clive Whaits

    IPC分类号： H03F3/217 ,  H03F1/56 ,  H03F3/193

    CPC分类号： H03F3/2171 ,  H03F1/56 ,  H03F1/565 ,  H03F3/193 ,  H03F3/217 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/423 ,  H03F2200/451

    摘要： A power amplifier is provided having an input for receiving a signal to be amplified that is associated with a fundamental frequency. An amplifier circuit of the power amplifier includes an active device for amplifying the input signal and an output for providing the amplified signal to a load. A load network is electrically interposed between the amplifier circuit and the output and includes fundamental frequency matching circuitry which presents an optimal resistance at the fundamental frequency. The load network further includes a parallel transmission line arrangement having, at the fundamental frequency, a one-eighth wavelength short-circuited stub and a one-eighth wavelength open-circuit stub. The fundamental frequency matching circuitry and the parallel transmission line arrangement cooperate such that the load network operatively presents an optimal resistance at the fundamental frequency, an open-circuit at a second harmonic frequency and a short-circuit at a third harmonic frequency.

    Power amplifier circuit and method of design
    9.
    发明授权
    Power amplifier circuit and method of design 有权

    公开(公告)号：US09859844B1

    公开(公告)日：2018-01-02

    申请号：US15289860

    申请日：2016-10-10

    申请人： Sebastien Amiot

    发明人： Sebastien Amiot

    IPC分类号： H03F1/07 ,  H03F1/02 ,  H03F3/21 ,  H03F1/56

    CPC分类号： H03F1/0205 ,  H03F1/42 ,  H03F1/565 ,  H03F3/21 ,  H03F3/26 ,  H03F2200/165 ,  H03F2200/171 ,  H03F2200/255 ,  H03F2200/423

    摘要： Structure and design methods of electrical power amplifiers suitable for broadband application such as television frequency or white spaces. An example broadband power amplifier passes a transmit carrier with modulations from BPSK to 256 QAM, on channel bandwidths from 6 to 32 MHz, over the entire UHF television band from 470 to 800 MHz using a low voltage, low power, narrowband power amplifier transistor. Based on a push-pull technique to lower the impedance level thus improving the match and doubling the power, the wide-band power amplification is performed with a balanced polynomial filter transform structure wherein the circuit impedance increases sequentially within the filter stage. The polynomial filtering makes high selectivity of out-of-band signals thereby cleaning up harmonic signals which prevent the need for additional high selective radio frequency filters. The invented power amplifier enables efficient broadband power amplifiers having a form factor within 300 square millimeters of space.