公开(公告)号：US06261962B1

公开(公告)日：2001-07-17

申请号：US08904954

申请日：1997-08-01

申请人： Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Babak Khamsehpour ,  Janet Hopkins ,  Alan Michael Hynes ,  Martin Edward Ryan ,  David Mark Haynes

发明人： Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Babak Khamsehpour ,  Janet Hopkins ,  Alan Michael Hynes ,  Martin Edward Ryan ,  David Mark Haynes

IPC分类号： H01L21311

CPC分类号： H01L21/30655 ,  H01L21/3086 ,  H01L21/312

摘要： A sidewall passivation layer is deposited on an etched feature in a semiconductor substrate with a hydrocarbon deposition gas by introducing H2, determining certain mixture percentages for the hydrocarbon gas/H2 mix at which the etch rate for the substrate peaks, the etch rate begins to rise from a generally steady state, and/or the etch rate falls to zero, and then maintaining the mixture percentage within a selected range. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the steady-state etch rate percentage and the peak etch rate percentage, then relatively high ion energies are used. Where the hydrocarbon gas/H2 mix is maintained at a percentage between the peak etch rate percentage and the percentage where the etch rate falls to zero, then relatively low ion energies are used. High aspect-ratio features in a semiconductor substrate can be produced by performing alternating etching and depositing a passivation layer on the substrate, where the deposition is performed according to the above-described deposition process.

摘要翻译： 侧壁钝化层通过引入H2而沉积在具有烃沉积气体的半导体衬底的蚀刻特征上，确定烃基气体/ H2混合物的某些混合百分比，其中衬底的蚀刻速率达峰值，蚀刻速率开始上升 和/或蚀刻速率降至零，然后将混合物百分比保持在所选择的范围内。 当烃气/ H2混合物保持在稳态蚀刻速率百分比和峰蚀刻速率百分比之间的百分比时，则使用相对较高的离子能量。 当烃气体/ H 2混合物保持在峰值蚀刻速率百分比与蚀刻速率降至零的百分比之间的百分比时，则使用相对低的离子能量。 半导体衬底中的高纵横比特征可以通过在衬底上执行交替蚀刻和沉积钝化层来制造，其中根据上述沉积工艺执行沉积。

公开(公告)号：US6051503A

公开(公告)日：2000-04-18

申请号：US904953

申请日：1997-08-01

申请人： Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Babak Khamsehpour ,  Janet Hopkins ,  Alan Michael Hynes ,  Martin Edward Ryan ,  David Mark Haynes

发明人： Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Babak Khamsehpour ,  Janet Hopkins ,  Alan Michael Hynes ,  Martin Edward Ryan ,  David Mark Haynes

IPC分类号： H01L21/302 ,  H01L21/203 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/00

CPC分类号： H01L21/30655

摘要： This invention relates to methods for treatment of semiconductor substrates and in particular a method of etching a trench in a semiconductor substrate in a reactor chamber using alternatively reactive ion etching and depositing a passivation layer by chemical vapour deposition, wherein one or more of the following parameters: gas flow rates, chamber pressure, plasma power, substrate bias, etch rate, deposition rate, cycle time and etching/deposition ratio vary with time.

摘要翻译： 本发明涉及用于处理半导体衬底的方法，特别是一种使用交替的反应离子蚀刻来蚀刻反应室中的半导体衬底中的沟槽并通过化学气相沉积沉积钝化层的方法，其中一个或多个以下参数 ：气体流速，室压力，等离子体功率，衬底偏压，蚀刻速率，沉积速率，循环时间和蚀刻/沉积比随时间变化。

公开(公告)号：US06187685B1

公开(公告)日：2001-02-13

申请号：US09245861

申请日：1999-02-08

申请人： Janet Hopkins ,  Ian Ronald Johnston ,  Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Alan Michael Hynes ,  Leslie Michael Lea

发明人： Janet Hopkins ,  Ian Ronald Johnston ,  Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Alan Michael Hynes ,  Leslie Michael Lea

IPC分类号： H01L2100

CPC分类号： H01L21/30655 ,  H01L21/32137

摘要： There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.

摘要翻译： 公开了一种蚀刻基板的方法和装置。 该方法包括蚀刻衬底或交替地蚀刻和沉积钝化层的步骤。 可以将脉冲的偏置频率施加到衬底上，并且可以处于或低于离子等离子体频率。