公开(公告)号：US07141504B1

公开(公告)日：2006-11-28

申请号：US09744212

申请日：1999-07-23

申请人： Jyoti Kiron Bhardwaj

发明人： Jyoti Kiron Bhardwaj

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： B81C1/00619 ,  B01J12/007 ,  B01J19/2445 ,  B01J2219/00038 ,  B01J2219/0004 ,  B01J2219/00058 ,  B01J2219/00162 ,  B01J2219/0809 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0894 ,  B81C2201/0112 ,  C01B7/24 ,  C07C17/00 ,  H01L21/30621 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

摘要： There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.

摘要翻译： 公开了一种处理材料表面上存在的基材或膜的方法，包括循环地执行以下步骤：（a）蚀刻该材料或膜; （b）在蚀刻特征的表面上沉积或形成钝化层; 和（c）从蚀刻的特征中选择性地去除钝化层，以便蚀刻沿基本垂直于材料或膜表面的方向进行。 在不存在等离子体的情况下执行步骤（a）或（b）中的至少一个。 还公开了一种用于执行该方法的装置。

公开(公告)号：US06926871B1

公开(公告)日：2005-08-09

申请号：US09674659

申请日：2000-03-06

申请人： Jyoti Kiron Bhardwaj

发明人： Jyoti Kiron Bhardwaj

IPC分类号： B01J7/00 ,  B01J12/00 ,  B01J19/08 ,  B01J19/24 ,  B81C1/00 ,  C01B7/24 ,  C07C17/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  F01N3/10

CPC分类号： B01J7/00 ,  B01J12/00 ,  B01J12/002 ,  B01J12/007 ,  B01J19/088 ,  B01J19/24 ,  B01J2219/00038 ,  B01J2219/0004 ,  B01J2219/00058 ,  B01J2219/00162 ,  B01J2219/0807 ,  B01J2219/0809 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0883 ,  B01J2219/0894 ,  C01B7/24 ,  C07C17/00 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081

摘要： A gas generator system is provided wherein supply sources for halogenated gases, including pure molecular halogens, are connected into a gas reaction chamber, or chamber system, to enable generation of a predetermined gas for localized use in a subsequent process. The reaction chamber has a valved outlet for direct supply of the generated gas to a single or multiple chamber processing tool or process chamber. Thus it is possible, for example, to provide for the localized generation of reactive process gases.

摘要翻译： 提供了一种气体发生器系统，其中用于卤代气体（包括纯分子卤素）的供应源连接到气体反应室或室系统中，以便能够产生用于在后续过程中局部使用的预定气体。 反应室具有用于将产生的气体直接供应到单个或多个室处理工具或处理室的阀出口。 因此，例如可以提供反应性工艺气体的局部产生。

公开(公告)号：US06534922B2

公开(公告)日：2003-03-18

申请号：US09884460

申请日：2001-06-20

申请人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

发明人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

IPC分类号： C23F102

CPC分类号： H01J37/321 ,  H05H1/46

摘要： A plasma processing apparatus includes a processing chamber having a working volume. A single Radio-Frequency (RF) plasma generating antenna is positioned outside the working volume for inducing an electric field in the working volume. A dielectric trough extends into a wall of the chamber. The antenna is non-planar and transfers power through at least one wall and the base of the trough.

摘要翻译： 等离子体处理装置包括具有工作容积的处理室。 单个射频（RF）等离子体产生天线位于工作体积的外部，用于在工作体积中引起电场。 电介质槽延伸到腔室的壁中。 天线是非平面的，并且通过至少一个壁和槽的底部传递电力。

公开(公告)号：US07491649B2

公开(公告)日：2009-02-17

申请号：US11080964

申请日：2005-03-16

申请人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

发明人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

IPC分类号： H01L21/302

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J2237/3348 ,  H01L21/30655

摘要： A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.

摘要翻译： 等离子体处理装置包括具有用于基板的支撑件的腔室和进入腔室的至少一个气体入口。 该装置被配置为通过至少一个气体入口交替地将蚀刻气体和沉积气体引入室中，并且将等离子体撞击到交替地引入室中的蚀刻气体和沉积气体中。 该装置还配备有用于在不影响中性自由基数密度的情况下将来自等离子体的离子通量减少和/或均化的衰减装置。

公开(公告)号：US06947653B2

公开(公告)日：2005-09-20

申请号：US09977065

申请日：2001-10-12

申请人： Jyoti Kiron Bhardwaj ,  Robert James Brainard ,  Zi-Wen Dong ,  David Dougherty ,  Erik W. Egan ,  Niranjan Gopinathan ,  David K. Nakamoto ,  Thomas Thuan Nguyen ,  Sanjay M. Thekdi ,  Anantharaman Vaidyanathan ,  Hiroaki Yamada ,  Yingchao Yan

发明人： Jyoti Kiron Bhardwaj ,  Robert James Brainard ,  Zi-Wen Dong ,  David Dougherty ,  Erik W. Egan ,  Niranjan Gopinathan ,  David K. Nakamoto ,  Thomas Thuan Nguyen ,  Sanjay M. Thekdi ,  Anantharaman Vaidyanathan ,  Hiroaki Yamada ,  Yingchao Yan

IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/136 ,  G02B6/34 ,  G02B6/10 ,  G02F1/295

CPC分类号： G02B6/1203 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12176

摘要： A planar lightwave circuit includes at least one optical waveguide core, and at least one feature proximate the core having a stress-engineered property to balance stress and therefore minimize birefringence affecting the core. A protective passivation layer is formed over the core and the feature to be substantially non-interfering with the balanced stress provided by the feature. The stress balancing feature may be an overcladding layer formed over the core, doped to have a coefficient of thermal expansion approximately matched to that of an underlying substrate, to symmetrically distribute stress in an undercladding between the overcladding and the substrate, away from the core. The protective passivation layer is formed to have a coefficient of thermal expansion approximately matched to that of the overcladding. In one exemplary embodiment, the passivation layer is formed from silicon nitride. Related concepts of stress release grooves, and core overetching, are also disclosed.

摘要翻译： 平面光波电路包括至少一个光波导芯，并且靠近芯的至少一个特征具有应力工程化特性以平衡应力，从而最小化影响芯的双折射。 在芯上形成保护性钝化层，并且该特征基本上不受由特征提供的平衡应力的干扰。 应力平衡特征可以是在芯上形成的外包层，被掺杂以具有与下层衬底的热膨胀系数近似匹配的热膨胀系数，以便在外包层和衬底之间的下包层对称地分布应力。 保护钝化层形成为具有与外包层大致匹配的热膨胀系数。 在一个示例性实施例中，钝化层由氮化硅形成。 还公开了应力释放槽和芯过蚀刻的相关概念。

公开(公告)号：US06697553B2

公开(公告)日：2004-02-24

申请号：US10077581

申请日：2002-02-15

申请人： Jyoti Kiron Bhardwaj ,  Robert James Brainard ,  David J. Chapman ,  Douglas E. Crafts ,  Zi-Wen Dong ,  David Dougherty ,  Erik W. Egan ,  James F. Farrell ,  Mark B. Farrelly ,  Niranjan Gopinathan ,  Kenzo Ishida ,  David K. Nakamoto ,  Thomas Thuan Nguyen ,  Suresh Ramalingam ,  Steven M. Swain ,  Sanjay M. Thekdi ,  Anantharaman Vaidyanathan ,  Hiroaki Yamada ,  Yingchao Yan

发明人： Jyoti Kiron Bhardwaj ,  Robert James Brainard ,  David J. Chapman ,  Douglas E. Crafts ,  Zi-Wen Dong ,  David Dougherty ,  Erik W. Egan ,  James F. Farrell ,  Mark B. Farrelly ,  Niranjan Gopinathan ,  Kenzo Ishida ,  David K. Nakamoto ,  Thomas Thuan Nguyen ,  Suresh Ramalingam ,  Steven M. Swain ,  Sanjay M. Thekdi ,  Anantharaman Vaidyanathan ,  Hiroaki Yamada ,  Yingchao Yan

IPC分类号： G02B634

CPC分类号： G02B6/12011 ,  G02B6/105 ,  G02B6/12 ,  G02B6/12016 ,  G02B6/12021 ,  G02B6/12026

摘要： A planar lightwave circuit includes an arrayed waveguide grating (AWG), with input and output waveguides, partially curved array waveguides with respective length differences, and planar waveguide regions for focusing optical energy between the input/output and array waveguides. Optimal waveguide widths and spacing along the planar waveguide region facets are disclosed, which are largely determinative of AWG size and optical performance. Also disclosed are optimal cross-sectional waveguide dimensions (e.g., width and height); modified index of refraction difference between the waveguide core and cladding regions; and optimal array waveguide lengths, path length differences, and free spectral range. These features, especially when combined with advanced fiber attachment, passivation and packaging techniques, result in high-yield, high-performance AWGs (both gaussian and flattop versions).

摘要翻译： 平面光波电路包括阵列波导光栅（AWG），其具有输入和输出波导，具有相应长度差的部分弯曲阵列波导和用于在输入/输出和阵列波导之间聚焦光能的平面波导区域。 公开了沿着平面波导区域面的最佳波导宽度和间距，其主要决定于AWG尺寸和光学性能。 还公开了最佳横截面波导尺寸（例如，宽度和高度）; 波导芯和包层区之间的折射率差异; 和最佳阵列波导长度，路径长度差和自由光谱范围。 这些特性，特别是结合先进的光纤附着，钝化和封装技术，可以获得高产出，高性能的AWG（高斯型和平板型）。

公开(公告)号：US06602384B2

公开(公告)日：2003-08-05

申请号：US09895169

申请日：2001-07-02

申请人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

发明人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

IPC分类号： H05H100

CPC分类号： H01J37/321 ,  H01J37/32935 ,  H01J37/3299

摘要： A workpiece support includes a support body having a surface for supporting a workpiece thereon, and at least one Langmuir probe embedded within the support body. The Langmuir probe is covered by a layer of semiconductor or insulator. The workpiece support further includes a mechanism for intermittently feeding RF power to Langmuir probe, and for measuring a discharge of a capacitor in series with the Langmuir probe while the RF power is not supplied to the Langmuir probe.

摘要翻译： 工件支撑件包括具有用于在其上支撑工件的表面的支撑体和嵌入在支撑体内的至少一个朗缪尔探针。 朗缪尔探针被半导体或绝缘体层覆盖。 工件支架还包括用于间歇地向Langmuir探头馈送RF功率的机构，以及用于测量与Langmuir探针串联的电容器的放电，同时RF功率未提供给Langmuir探头。

公开(公告)号：US06259209B1

公开(公告)日：2001-07-10

申请号：US08938995

申请日：1997-09-26

申请人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

发明人： Jyoti Kiron Bhardwaj ,  Leslie Michael Lea

IPC分类号： H01J724

CPC分类号： H01J37/321 ,  H05H1/46

摘要： A wafer processing chamber 11 includes a wafer support 12, a dielectyric window 13 and coaxial coils 15 and 16 located outside the dielectric window 13 for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.

摘要翻译： 晶片处理室11包括晶片支撑件12，介电窗13和位于电介质窗13外部的同轴线圈15和16，用于在室内诱导等离子体。 描述各种线圈/电介质窗口以及用于其控制的协议。

公开(公告)号：US06187685B1

公开(公告)日：2001-02-13

申请号：US09245861

申请日：1999-02-08

申请人： Janet Hopkins ,  Ian Ronald Johnston ,  Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Alan Michael Hynes ,  Leslie Michael Lea

发明人： Janet Hopkins ,  Ian Ronald Johnston ,  Jyoti Kiron Bhardwaj ,  Huma Ashraf ,  Alan Michael Hynes ,  Leslie Michael Lea

IPC分类号： H01L2100

CPC分类号： H01L21/30655 ,  H01L21/32137

摘要： There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.

摘要翻译： 公开了一种蚀刻基板的方法和装置。 该方法包括蚀刻衬底或交替地蚀刻和沉积钝化层的步骤。 可以将脉冲的偏置频率施加到衬底上，并且可以处于或低于离子等离子体频率。

公开(公告)号：US06602433B1

公开(公告)日：2003-08-05

申请号：US09674658

申请日：2000-12-18

申请人： Jyoti Kiron Bhardwaj ,  Nicholas Shepherd ,  Leslie Michael Lea

发明人： Jyoti Kiron Bhardwaj ,  Nicholas Shepherd ,  Leslie Michael Lea

IPC分类号： B44C122

CPC分类号： C07C17/00 ,  B01J7/00 ,  B01J12/00 ,  B01J12/002 ,  B01J12/007 ,  B01J19/088 ,  B01J19/24 ,  B01J19/2445 ,  B01J19/245 ,  B01J2219/00038 ,  B01J2219/0004 ,  B01J2219/00058 ,  B01J2219/00162 ,  B01J2219/0807 ,  B01J2219/0809 ,  B01J2219/0841 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0883 ,  B01J2219/0894 ,  C01B7/24 ,  G01P15/0802 ,  G01P15/125 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081

摘要： A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered directly from a gas generation and delivery system positioned locally to the chamber.

摘要翻译： 通过将蚀刻剂和/或沉积气体供应到其中所述基板所在的室中来处理基板。 为了避免与有毒气体的运输相关的问题，这些过程所需的气体直接从定位于腔室的气体发生和输送系统输送。