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1.
公开(公告)号:US10230100B2
公开(公告)日:2019-03-12
申请号:US14761999
申请日:2013-12-25
发明人: Yusuke Sugiyama , Masataka Nakanishi , Nobuhiro Goda , Tomohiro Niimi , Masakazu Murase , Takeshi Kondo , Shigenori Koishi , Hiroshi Hirate , Yoshihiro Nakagaki , Mutsumi Takahashi
摘要: A negative-electrode active material is used for a negative electrode, the negative-electrode active material including: agglomerated particles including nanometer-size silicon produced by heat treating a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n; and a carbon layer including amorphous carbon, and covering at least some of the agglomerated particles to be composited therewith. An electric storage apparatus including the same is not only able to reduce the irreversible capacity, but also able to inhibit the generation of “SEI.”
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公开(公告)号:US09527748B2
公开(公告)日:2016-12-27
申请号:US14441883
申请日:2013-11-18
发明人: Yusuke Sugiyama , Masataka Nakanishi , Takashi Mori , Masakazu Murase , Tomohiro Niimi , Yoshihiro Nakagaki , Shigenori Koishi , Hiroshi Hirate
IPC分类号: C01B33/021 , C01B33/02 , C08G77/60 , H01M4/38 , H01M4/62 , H01G11/30 , C09D183/16 , C09D183/14 , H01G11/86 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M10/0525 , H01M10/052 , B82Y40/00 , H01M4/02
CPC分类号: C01B33/021 , B82Y40/00 , C01B33/02 , C01P2004/64 , C01P2006/12 , C01P2006/40 , C08G77/60 , C09D183/14 , C09D183/16 , H01G11/30 , H01G11/86 , H01M4/049 , H01M4/134 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/621 , H01M4/622 , H01M10/052 , H01M10/0525 , H01M2004/021 , H01M2004/027 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要: A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm−1, 360±10 cm−1, 498±10 cm−1, 638±10 cm−1, and 734±10 cm−1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content.
摘要翻译: 通过热处理层状聚硅烷生产的纳米尺寸硅材料显示存在于341±10cm -1,360±10cm -1,498±10cm -1,638±10cm -1和734的拉曼位移峰 在拉曼光谱中为±10cm -1,比表面积大,SiO含量降低。
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