公开(公告)号：US09761479B2

公开(公告)日：2017-09-12

申请号：US14902764

申请日：2014-07-03

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Ko Imaoka ,  Motoki Kobayashi ,  Hidetsugu Uchida ,  Kuniaki Yagi ,  Takamitsu Kawahara ,  Naoki Hatta ,  Akiyuki Minami ,  Toyokazu Sakata ,  Tomoatsu Makino ,  Hideki Takagi ,  Yuuichi Kurashima

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20 ,  H01L29/16

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76254 ,  H01L29/1608

摘要： A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

公开(公告)号：US09773678B2

公开(公告)日：2017-09-26

申请号：US15325016

申请日：2015-07-09

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION

发明人： Ko Imaoka ,  Motoki Kobayashi ,  Hidetsugu Uchida ,  Kuniaki Yagi ,  Takamitsu Kawahara ,  Naoki Hatta ,  Akiyuki Minami ,  Toyokazu Sakata ,  Tomoatsu Makino ,  Mitsuharu Kato

IPC分类号： H01L21/265 ,  H01L29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L21/324 ,  H01L21/18

CPC分类号： H01L21/26506 ,  H01L21/02 ,  H01L21/046 ,  H01L21/187 ,  H01L21/324 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36

摘要： A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.