公开(公告)号：US09761479B2

公开(公告)日：2017-09-12

申请号：US14902764

申请日：2014-07-03

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Ko Imaoka ,  Motoki Kobayashi ,  Hidetsugu Uchida ,  Kuniaki Yagi ,  Takamitsu Kawahara ,  Naoki Hatta ,  Akiyuki Minami ,  Toyokazu Sakata ,  Tomoatsu Makino ,  Hideki Takagi ,  Yuuichi Kurashima

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20 ,  H01L29/16

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/76254 ,  H01L29/1608

摘要： A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

公开(公告)号：US09773678B2

公开(公告)日：2017-09-26

申请号：US15325016

申请日：2015-07-09

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  SICOXS CORPORATION

发明人： Ko Imaoka ,  Motoki Kobayashi ,  Hidetsugu Uchida ,  Kuniaki Yagi ,  Takamitsu Kawahara ,  Naoki Hatta ,  Akiyuki Minami ,  Toyokazu Sakata ,  Tomoatsu Makino ,  Mitsuharu Kato

IPC分类号： H01L21/265 ,  H01L29/36 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L21/324 ,  H01L21/18

CPC分类号： H01L21/26506 ,  H01L21/02 ,  H01L21/046 ,  H01L21/187 ,  H01L21/324 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36

摘要： A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

公开(公告)号：US20150023389A1

公开(公告)日：2015-01-22

申请号：US14373846

申请日：2013-01-21

申请人： Kaori NAKAGAWA ,  Hikaru NAKAGAWA ,  Nao NAKAGAWA ,  KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  NATIONAL UNIVERSITY CORPORATION KAGAWA UNIVERSITY ,  INSTITUTE OF NATIONAL COLLEGES OF TECHNOLOGY, JAPAN

发明人： Ko Imaoka ,  Yoshifumi Suzaki ,  Hiromu Iwata ,  Kiyoshi Nakagawa

IPC分类号： G01K11/32 ,  G02B6/34

CPC分类号： G01K11/3206 ,  G01K2205/00 ,  G02B6/02204 ,  G02B6/34 ,  H01M6/5044 ,  H01M10/482 ,  H01M10/486

摘要： An optical fiber for a temperature sensor and a power device monitoring system that can measure temperatures at different measurement positions by a simple construction are provided. An optical fiber for the sensor 10 comprises a temperature assurance FBG 20 and temperature measurement FBGs 30 as FBGs wherein the refractive index of a core changes periodically. Wavelength band of light incident to the optical fiber for the sensor 10 includes Bragg wavelengths of the temperature assurance FBG 20 and the temperature measurement FBGs 30. The power device monitoring system 1 measures temperatures of the temperature assurance FBG 20 and the temperature measurement FBGs 30 based on their Bragg wavelengths.

摘要翻译： 提供了一种用于温度传感器的光纤和能够通过简单结构测量不同测量位置处的温度的功率器件监测系统。 用于传感器10的光纤包括温度保证FBG 20和作为FBG的温度测量FBG 30，其中芯的折射率周期性地变化。 入射到传感器10的光纤的光波长带包括温度保证FBG 20和温度测量FBG 30的布拉格波长。功率器件监视系统1基于温度保证FBG 20和温度测量FBG 30的温度来测量 在其布拉格波长上。

公开(公告)号：US20150069996A1

公开(公告)日：2015-03-12

申请号：US14373833

申请日：2013-01-21

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI ,  NATIONAL UNIVERSITY CORPORATION KAGAWA UNIVERSITY ,  INSTITUTE OF NATIONAL COLLEGES OF TECH. JAPAN

发明人： Ko Imaoka ,  Yoshifumi Suzaki ,  Hiromu Iwata ,  Kiyoshi Nakagawa

IPC分类号： G01R19/00 ,  G01D5/353 ,  G01R1/44 ,  G02B6/34

CPC分类号： G01R19/00 ,  G01D5/35316 ,  G01D5/35345 ,  G01D5/35351 ,  G01D5/35377 ,  G01D5/3538 ,  G01K11/3206 ,  G01R1/44 ,  G01R15/22 ,  G01R15/24 ,  G01R19/03 ,  G02B6/02204 ,  G02B6/34

摘要： An optical fiber for a sensor that can measure a current or a voltage precisely is provided. The optical fiber for the sensor 10 comprises: an FBG 12 wherein a refractive index of a core changes periodically; a metal layer 13 for sheathing the FBG 12; and a pair of electrodes 14 and 15 provided at the metal layer 13. The electrodes 14 and 15 are connected to an object to be measured in desired positions. Current flowing through the metal layer 13 is calculated based on variation in Bragg wavelength of the FBG 12.

摘要翻译： 提供了可以精确地测量电流或电压的用于传感器的光纤。 用于传感器10的光纤包括：FBG 12，其中芯的折射率周期性地变化; 用于包覆FBG 12的金属层13; 以及设置在金属层13的一对电极14和15.电极14和15在期望的位置连接到被测量物体。 基于FBG 12的布拉格波长的变化计算流过金属层13的电流。

公开(公告)号：US10680068B2

公开(公告)日：2020-06-09

申请号：US16319053

申请日：2017-07-13

申请人： SICOXS CORPORATION

发明人： Ko Imaoka ,  Takanori Murasaki ,  Toshihisa Shimo ,  Hidetsugu Uchida ,  Akiyuki Minami

IPC分类号： H01L29/16 ,  H01L29/04

摘要： A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.