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公开(公告)号:US20220195243A1
公开(公告)日:2022-06-23
申请号:US17552932
申请日:2021-12-16
Applicant: KCTECH CO., LTD.
Inventor: Jin Sook HWANG , Hyun Goo KONG , Yun Su KIM
IPC: C09G1/02
Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.
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公开(公告)号:US20220127495A1
公开(公告)日:2022-04-28
申请号:US17511582
申请日:2021-10-27
Applicant: KCTECH CO., LTD.
Inventor: Jin Sook HWANG , Hyun Goo KONG , Eun Jin LEE
Abstract: A polishing slurry composition is provided. The polishing slurry composition includes abrasive particles, an oxidizer, an iron-containing catalyst, and a stabilizer, and a retention rate of the oxidizer according to Equation 1 is 70% or greater. Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition) [Equation 1]
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公开(公告)号:US20250002755A1
公开(公告)日:2025-01-02
申请号:US18684241
申请日:2022-08-08
Applicant: KCTECH CO., LTD.
Inventor: Jin Sook HWANG , Hyun Goo KONG , Yun Su KIM
Abstract: The present invention relates to a slurry composition for metal polishing, comprising: colloidal silica; and an oxidizing agent; and at least one selected from among a polishing catalyst, a metal polishing enhancer, a polishing inhibitor, and a dishing and erosion reducer, wherein the colloidal silica has a particle size distribution of colloidal silica according to equation 1.
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公开(公告)号:US20210269675A1
公开(公告)日:2021-09-02
申请号:US17184620
申请日:2021-02-25
Applicant: KCTECH CO., LTD.
Inventor: Jin Sook HWANG , Hyun Goo KONG , In Seol HWANG
Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition for CMP includes abrasive particles, an oxidizer, and a carbon polishing inhibitor.
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