公开(公告)号：US20220119679A1

公开(公告)日：2022-04-21

申请号：US17418546

申请日：2019-11-18

Applicant: KCTECH CO., LTD.

Inventor： Jae Woo LEE ,  Ji Hye KIM ,  Bo Hyeok CHOI

IPC: C09G1/02 ,  H01L21/321

Abstract: The present disclosure relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using the same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present disclosure includes: abrasive particles; a surface roughness reducing agent; a polishing regulator containing an organic acid; and a pH regulator.

公开(公告)号：US20250026960A1

公开(公告)日：2025-01-23

申请号：US18715108

申请日：2022-12-01

Applicant: KCTECH CO.,LTD.

Inventor： Bo Hyeok CHOI ,  Hyun Goo KONG ,  Ji Hye KIM

IPC: C09G1/02

Abstract: The present invention relates to a polishing slurry composition, and more specifically to a polishing slurry composition for polysilicon polishing, the composition comprising: colloidal silica abrasive particles; a quaternary ammonium cationic monomer; and an acidic material.

公开(公告)号：US20230033789A1

公开(公告)日：2023-02-02

申请号：US17786741

申请日：2020-10-30

Applicant: KCTECH CO., LTD.

Inventor： Bo Hyeok CHOI ,  Jae Hak LEE ,  Jae Woo LEE ,  Ji Hye KIM ,  Jae Ik LEE

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

Abstract: The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing control agent containing an organic acid, an inorganic acid, or both; an organic film polishing enhancer containing an amide compound or an amide polymer; an oxidizing agent; and a pH control agent.

公开(公告)号：US20210009859A1

公开(公告)日：2021-01-14

申请号：US16918139

申请日：2020-07-01

Applicant: KCTECH CO., LTD.

Inventor： Ji Hye KIM ,  Bo Hyeok CHOI ,  Jae Woo LEE ,  Jae Ik LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: A chemical mechanical polishing (CMP) slurry composition for polishing multiple films and a polishing method using the CMP slurry composition are provided. The CMP slurry composition includes abrasive particles, a surface roughness modifier including a water-soluble polymer, a polishing regulator including an organic acid, and a polishing profile improving agent including a nonionic surfactant.