公开(公告)号：US20220195243A1

公开(公告)日：2022-06-23

申请号：US17552932

申请日：2021-12-16

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Yun Su KIM

IPC: C09G1/02

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.

公开(公告)号：US20210269675A1

公开(公告)日：2021-09-02

申请号：US17184620

申请日：2021-02-25

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  In Seol HWANG

IPC: C09G1/02 ,  C09K13/00 ,  C09K13/04

Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition for CMP includes abrasive particles, an oxidizer, and a carbon polishing inhibitor.

公开(公告)号：US20220127495A1

公开(公告)日：2022-04-28

申请号：US17511582

申请日：2021-10-27

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Eun Jin LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes abrasive particles, an oxidizer, an iron-containing catalyst, and a stabilizer, and a retention rate of the oxidizer according to Equation 1 is 70% or greater. Retention rate (%) of oxidizer=(concentration (%) of oxidizer after 7 days at room temperature×100)/(initial concentration (%) of oxidizer in polishing slurry composition)  [Equation 1]

公开(公告)号：US20200157382A1

公开(公告)日：2020-05-21

申请号：US16323514

申请日：2017-06-16

Applicant: KCTECH CO.,LTD.

Inventor： Han Teo PARK ,  Hyun Goo KONG ,  Sang Mi LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a tungsten barrier layer. A slurry composition for polishing a tungsten barrier layer according to an embodiment of the present invention comprises abrasive grains and a sulfur-containing amino acid, and can improve edge over erosion (EOE).

公开(公告)号：US20250002755A1

公开(公告)日：2025-01-02

申请号：US18684241

申请日：2022-08-08

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook HWANG ,  Hyun Goo KONG ,  Yun Su KIM

IPC: C09G1/02 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for metal polishing, comprising: colloidal silica; and an oxidizing agent; and at least one selected from among a polishing catalyst, a metal polishing enhancer, a polishing inhibitor, and a dishing and erosion reducer, wherein the colloidal silica has a particle size distribution of colloidal silica according to equation 1.

公开(公告)号：US20230212429A1

公开(公告)日：2023-07-06

申请号：US18088607

申请日：2022-12-25

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  In Seol HWANG ,  Hyun Goo KONG

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a slurry composition for a metal film for a contact process. A polishing slurry composition includes abrasive particles, a compound including one or more functional groups capable of hydrogen bonding, a nonionic polymer including one or more hydrophilic functional groups in a repeating unit structure, and an oxidizer.

公开(公告)号：US20250026960A1

公开(公告)日：2025-01-23

申请号：US18715108

申请日：2022-12-01

Applicant: KCTECH CO.,LTD.

Inventor： Bo Hyeok CHOI ,  Hyun Goo KONG ,  Ji Hye KIM

IPC: C09G1/02

Abstract: The present invention relates to a polishing slurry composition, and more specifically to a polishing slurry composition for polysilicon polishing, the composition comprising: colloidal silica abrasive particles; a quaternary ammonium cationic monomer; and an acidic material.

公开(公告)号：US20180355213A1

公开(公告)日：2018-12-13

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo KONG ,  Jung Hun KIM ,  Sang Mi LEE ,  Woo In LEE ,  Hee Sook CHEON ,  Sang Kyun KIM ,  Hao CUI ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/28 ,  H01L27/108 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.