公开(公告)号：US20180171464A1

公开(公告)日：2018-06-21

申请号：US15735847

申请日：2017-01-25

Applicant: KEIHIN RAMTECH CO., LTD.

Inventor： Hiroshi IWATA ,  Toshiyuki NEDU ,  Yuta TAKAKUWA ,  Naoya OKADA ,  Ippei SATO ,  Naonori SHIBATA ,  Keiichi HASHIMOTO

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  C23C14/35 ,  C23C14/562 ,  H01J37/342 ,  H01J37/3423 ,  H05H1/50

Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

公开(公告)号：US20210050196A1

公开(公告)日：2021-02-18

申请号：US17089100

申请日：2020-11-04

Applicant: Keihin Ramtech Co., Ltd.

Inventor： Hiroshi IWATA ,  Toshiyuki NEDU ,  Yuta TAKAKUWA ,  Naoya OKADA ,  Ippei SATO ,  Naonori SHIBATA ,  Keiichi HASHIMOTO

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

公开(公告)号：US20190203346A1

公开(公告)日：2019-07-04

申请号：US16297121

申请日：2019-03-08

Applicant: Keihin Ramtech Co., Ltd.

Inventor： Hiroshi IWATA ,  Toshiyuki NEDU ,  Yuta TAKAKUWA ,  Naoya OKADA ,  Ippei SATO ,  Naonori SHIBATA ,  Keiichi HASHIMOTO

IPC: C23C14/34 ,  C23C14/56 ,  C23C14/35 ,  H01J37/34 ,  H05H1/50

Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

公开(公告)号：US20200303173A1

公开(公告)日：2020-09-24

申请号：US16897762

申请日：2020-06-10

Applicant: Keihin Ramtech Co., Ltd.

Inventor： Hiroshi IWATA ,  Toshiyuki NEDU ,  Yuta TAKAKUWA ,  Naoya OKADA ,  Ippei SATO ,  Naonori SHIBATA ,  Keiichi HASHIMOTO

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34

Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.