Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

    公开(公告)号:US20210082674A1

    公开(公告)日:2021-03-18

    申请号:US17106526

    申请日:2020-11-30

    Inventor: Hiroshi IWATA

    Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

    Heat-Transfer Roller for Sputtering and Method of Making the Same

    公开(公告)号:US20210050196A1

    公开(公告)日:2021-02-18

    申请号:US17089100

    申请日:2020-11-04

    Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

    Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

    公开(公告)号:US20190333745A1

    公开(公告)日:2019-10-31

    申请号:US16386010

    申请日:2019-04-16

    Inventor: Hiroshi IWATA

    Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

    HEAT-TRANSFER ROLLER FOR SPUTTERING AND METHOD OF MAKING THE SAME

    公开(公告)号:US20200303173A1

    公开(公告)日:2020-09-24

    申请号:US16897762

    申请日:2020-06-10

    Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

    Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

    公开(公告)号:US20200243311A1

    公开(公告)日:2020-07-30

    申请号:US16838295

    申请日:2020-04-02

    Inventor: Hiroshi IWATA

    Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

    Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

    公开(公告)号:US20190333746A1

    公开(公告)日:2019-10-31

    申请号:US16386158

    申请日:2019-04-16

    Inventor: Hiroshi IWATA

    Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

    Multilayer Structure and Method for Producing Multilayer Structure

    公开(公告)号:US20220302325A1

    公开(公告)日:2022-09-22

    申请号:US17638625

    申请日:2020-08-25

    Inventor: Hiroshi IWATA

    Abstract: An object of the present invention is to provide a multilayer structure (1) capable of preventing or suppressing the diffusion of a diffusing component from a layer (12, 16) including said diffusing component to a layer (14, 17) adjacent to said layer (12, 16). A multilayer structure (1) wherein the multilayer structure (1) comprises: a conducting layer (12, 16) which is conductive and includes a diffusing component capable of diffusing into an adjacent layer (14, 17); and a conductive diffusion-prevention layer (14, 17), provided so as to be adjacent to the conducting layer (12, 16), including at least one metal or metal oxide, so as be conductive, and including a noble gas, the ratio of the number of atoms of which to the number of atoms of the main metal in the at least one metal or metal oxide being 0.40 or more.

    Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus

    公开(公告)号:US20210351022A1

    公开(公告)日:2021-11-11

    申请号:US17385052

    申请日:2021-07-26

    Inventor: Hiroshi IWATA

    Abstract: The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

    Sputtering Cathode, Sputtering Device, and Method for Producing Film-Formed Body

    公开(公告)号:US20190203346A1

    公开(公告)日:2019-07-04

    申请号:US16297121

    申请日:2019-03-08

    Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

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