公开(公告)号：US20230094121A1

公开(公告)日：2023-03-30

申请号：US17910138

申请日：2021-03-09

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Mohamed EDDAOUDI ,  Khaled N. SALAMA ,  Osama SHEKHAH ,  Sandeep G. SURYA ,  Saravanan YUVARAJA

IPC: G01N27/22 ,  G01N33/24

Abstract: A moisture sensor is configured to be deployed in soil for measuring a moisture content. The moisture sensor includes a housing; a transistor configured to interact with water from the soil; a power source configured to generate an electrical current; and a processing unit configured to receive a reading from the transistor, and to calculate the moisture content of the soil based on the reading. The transistor includes a metal-organic framework, MOF.

公开(公告)号：US20230060532A1

公开(公告)日：2023-03-02

申请号：US17796933

申请日：2021-02-01

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Valeriya CHERNIKOVA ,  Mohamed EDDAOUDI ,  Khaled Nabil SALAMA ,  Osama SHEKHAH ,  Sandeep G. SURYA ,  Mani Teja VIJJAPU ,  Saravanan YUVARAJA

IPC: G01N27/414 ,  G01N33/00

Abstract: An NO2 detection device includes a substrate; a drain formed on the substrate; a source formed on the substrate; a p-type polymer semiconductor layer formed on the substrate, between the drain and the source; and an n-type metal-organic framework layer located over the p-type polymer semiconductor layer. The n-type metal-organic framework layer has apertures having a size larger than a size of the NO2 molecules so that the NO2 molecules pass through the n-type metal-organic framework layer to arrive at the p-type polymer semiconductor layer to increase an electrical current.

公开(公告)号：US20220365022A1

公开(公告)日：2022-11-17

申请号：US17767191

申请日：2020-10-01

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Mani Teja VIJJAPU ,  Sandeep G. SURYA ,  Saravanan YUVARAJA ,  Khaled Nabil SALAMA

IPC: G01N27/407 ,  G01N33/00 ,  G01N27/414

Abstract: A gas sensor includes a gate electrode; a dielectric layer covering one surface of the gate electrode; an indium (In) gallium (Ga) zinc (Zn) oxide (O) (IGZO) thin-film formed over the dielectric layer, and first and second metallic electrodes formed on a surface of the IGZO thin-film to act as source and drain, respectively. The IGZO thin-film has an In concentration of 11%+/−3%, Ga concentration of 11%+/−3%, Zn concentration of 7%+/−3%, and 0 concentration of 71%+/−3%, with a sum of the concentrations being 100%, and the gas interacts with the IGZO thin-film and changes a current through the IGZO thin-film.