METHOD OF PHOTODEGRADING DYES
    2.
    发明公开

    公开(公告)号:US20230322577A1

    公开(公告)日:2023-10-12

    申请号:US17819336

    申请日:2022-08-12

    CPC classification number: C01G31/00 B01J23/22 B01J23/72 B01J35/004

    Abstract: A hybrid photoactive heterojunction including a copper vanadate, Cu2V2O7 (CVO) and a zinc vanadate, Zn2V2O6 (ZVO). Particles of the ZVO are dispersed in particles of the CVO to form the hybrid photoactive heterojunction. The hybrid photoactive heterojunction in the form of a photoactive film includes a substrate which is at least partially coated with the hybrid photoactive heterojunction. A method of photodegrading a dye includes contacting the photoactive film and the dye in a solution and exposing the solution to light. A method of photoelectrochemically oxidizing water includes contacting the photoactive film with water in a solution and exposing the solution to light.

    METHOD FOR MAKING In2O3 NANOARRAY AND USE FOR SPLITTING WATER

    公开(公告)号:US20190382914A1

    公开(公告)日:2019-12-19

    申请号:US16554890

    申请日:2019-08-29

    Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per μm2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

    SINGLE STEP METHOD FOR PRODUCING In2O3 NANOARRAY

    公开(公告)号:US20190390363A1

    公开(公告)日:2019-12-26

    申请号:US16554860

    申请日:2019-08-29

    Abstract: A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per μm2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

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