公开(公告)号：US20230274942A1

公开(公告)日：2023-08-31

申请号：US17902751

申请日：2022-09-02

Applicant: KIOXIA CORPORATION

Inventor： Hiroshi NAMBU ,  Junichi HASHIMOTO ,  Tsubasa IMAMURA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes placing a substrate having a to-be-processed layer on a stage within an etching chamber and supplying an etching gas into the etching chamber while keeping the stage at a first temperature to perform an etching treatment to etch the to-be-processed layer on the substrate by using a reactive ion etching method. After the etching treatment, and without exposing the substrate to the atmosphere, supplying an inert gas into the etching chamber while keeping the stage at a second temperature, which is higher than the first temperature, to perform a high-temperature treatment to heat the to-be-processed layer.