公开(公告)号：US20240098999A1

公开(公告)日：2024-03-21

申请号：US18458069

申请日：2023-08-29

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H10B43/27 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H10B80/00

CPC classification number: H10B43/27 ,  H01L24/08 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: According to one embodiment, a semiconductor memory device includes a lower layer, a stacked body above the lower layer with first conductive layers and first insulating layers alternately stacked. A pillar penetrates through the stacked body to reach the lower layer. At least one first insulating layer other than the lowest among the first insulating layers in a first region of the stacked body is thicker than first insulating layers in a second region above the first region. The pillar has a first bowing shape at the height of the at least one thicker first insulating layer and a second bowing shape at a height in the second region.

公开(公告)号：US20220285170A1

公开(公告)日：2022-09-08

申请号：US17346921

申请日：2021-06-14

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H01L21/425 ,  H01J37/08 ,  H01J37/32

Abstract: A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

公开(公告)号：US20210066090A1

公开(公告)日：2021-03-04

申请号：US16806622

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Junichi HASHIMOTO ,  Kaori NARUMIYA ,  Kosuke HORIBE ,  Soichi YAMAZAKI ,  Kei WATANABE ,  Yusuke KONDO ,  Mitsuhiro OMURA ,  Takehiro KONDOH ,  Yuya MATSUBARA ,  Junya FUJITA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

公开(公告)号：US20220301809A1

公开(公告)日：2022-09-22

申请号：US17472444

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Toshiyuki SASAKI

IPC: H01J37/147 ,  H01L21/768 ,  H01L21/263 ,  H01L21/02 ,  H01L27/11575 ,  H01J37/32 ,  C23C16/04 ,  C23C16/40 ,  C23C16/48 ,  C23C16/52

Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

公开(公告)号：US20230274942A1

公开(公告)日：2023-08-31

申请号：US17902751

申请日：2022-09-02

Applicant: KIOXIA CORPORATION

Inventor： Hiroshi NAMBU ,  Junichi HASHIMOTO ,  Tsubasa IMAMURA

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes placing a substrate having a to-be-processed layer on a stage within an etching chamber and supplying an etching gas into the etching chamber while keeping the stage at a first temperature to perform an etching treatment to etch the to-be-processed layer on the substrate by using a reactive ion etching method. After the etching treatment, and without exposing the substrate to the atmosphere, supplying an inert gas into the etching chamber while keeping the stage at a second temperature, which is higher than the first temperature, to perform a high-temperature treatment to heat the to-be-processed layer.

公开(公告)号：US20210296137A1

公开(公告)日：2021-09-23

申请号：US17005568

申请日：2020-08-28

Applicant: Kioxia Corporation

Inventor： Junichi HASHIMOTO ,  Mitsuhiro OMURA ,  Toshiyuki SASAKI

IPC: H01L21/311 ,  H01L21/033

Abstract: A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

公开(公告)号：US20210287903A1

公开(公告)日：2021-09-16

申请号：US17004216

申请日：2020-08-27

Applicant: Kioxia Corporation

Inventor： Takehiro KONDOH ,  Junichi HASHIMOTO ,  Soichi YAMAZAKI ,  Yuya MATSUBARA

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/308

Abstract: A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.