公开(公告)号：US20220302371A1

公开(公告)日：2022-09-22

申请号：US17463522

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Katsuhiko KOUI ,  Masaru TOKO ,  Soichi OIKAWA ,  Hideyuki SUGIYAMA

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22

Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.