公开(公告)号：US20220302371A1

公开(公告)日：2022-09-22

申请号：US17463522

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Katsuhiko KOUI ,  Masaru TOKO ,  Soichi OIKAWA ,  Hideyuki SUGIYAMA

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22

Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.

公开(公告)号：US20240298549A1

公开(公告)日：2024-09-05

申请号：US18592306

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Rina NOMOTO ,  Hideyuki SUGIYAMA ,  Daisuke WATANABE ,  Bao NGUYEN VIET ,  Youngmin EEH ,  Masaru TOKO ,  Taiga ISODA

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/20

CPC classification number: H10N50/85 ,  H10B61/10 ,  H10N50/20

Abstract: A magnetic device includes a first magnetic layer, a second magnetic layer, and a nonmagnetic layer between the first and second magnetic layers and including: a first layer in contact with the first magnetic layer and including a magnesium oxide, a second layer in contact with the second magnetic layer and including a magnesium oxide, and a third layer between the first and second layers and including a scandium nitride.

公开(公告)号：US20220085276A1

公开(公告)日：2022-03-17

申请号：US17117813

申请日：2020-12-10

Applicant: Kioxia Corporation

Inventor： Masaru TOKO ,  Hideyuki SUGIYAMA ,  Soichi OIKAWA ,  Masahiko NAKAYAMA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a variable magnetization direction, a third magnetic layer having a fixed magnetization direction and a nonmagnetic layer, the first magnetic layer being provided between the second and third magnetic layers, and the nonmagnetic layer being provided between the first and third magnetic layers. The second magnetic layer has a superlattice structure in which first element layers and second element layers are alternately stacked. The first element is Co, and the second element is selected from Pt, Ni and Pd, and the second magnetic layer contains Cr as a third element.

公开(公告)号：US20210082999A1

公开(公告)日：2021-03-18

申请号：US16816775

申请日：2020-03-12

Applicant: KIOXIA CORPORATION

Inventor： Masaru TOKO ,  Tadaomi DAIBOU ,  Junichi ITO ,  Taichi IGARASHI ,  Tadashi KAI

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetoresistive memory device according to one embodiment includes: first and second layer stacks, each of which includes: a first ferromagnetic layer having a magnetization directed in a first direction; a non-magnetic first conductive layer above the first ferromagnetic layer, a second ferromagnetic layer provided above the first conductive layer and having a magnetization directed in a second direction different from the first direction, a first insulating layer on an upper surface of the second ferromagnetic layer, and a third ferromagnetic layer above the first insulating layer. The second ferromagnetic layer of the second layer stack is thicker than the second ferromagnetic layer of the first layer stack.