公开(公告)号：US20230079445A1

公开(公告)日：2023-03-16

申请号：US17692625

申请日：2022-03-11

Applicant: Kioxia Corporation

Inventor： Kenji FUKUDA ,  Hideyuki SUGIYAMA ,  Masahiko NAKAYAMA ,  Hiroyuki KANAYA ,  Soichi OIKAWA

IPC: H01L27/22

Abstract: According to one embodiment, a memory device includes a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a third memory cell adjacent to the first memory cell in a second direction, each of the first, second, and third memory cells including a resistance change memory element and a switching element. The switching element includes first and second electrodes, and a switching material layer between the first and second electrodes, the first and second electrodes overlap each other when viewed from the first direction, the first electrodes in the first and second memory cells are apart from each other, and the switching material layers in the first and second memory cells are continuously provided.

公开(公告)号：US20220085276A1

公开(公告)日：2022-03-17

申请号：US17117813

申请日：2020-12-10

Applicant: Kioxia Corporation

Inventor： Masaru TOKO ,  Hideyuki SUGIYAMA ,  Soichi OIKAWA ,  Masahiko NAKAYAMA

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a variable magnetization direction, a third magnetic layer having a fixed magnetization direction and a nonmagnetic layer, the first magnetic layer being provided between the second and third magnetic layers, and the nonmagnetic layer being provided between the first and third magnetic layers. The second magnetic layer has a superlattice structure in which first element layers and second element layers are alternately stacked. The first element is Co, and the second element is selected from Pt, Ni and Pd, and the second magnetic layer contains Cr as a third element.

公开(公告)号：US20250098545A1

公开(公告)日：2025-03-20

申请号：US18829343

申请日：2024-09-10

Applicant: Kioxia Corporation

Inventor： Kenji FUKUDA ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Soichi OIKAWA

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

Abstract: According to one embodiment, a magnetic memory device includes a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer provided on an opposite side to a side on which the first nonmagnetic layer is provided with respect to the second ferromagnetic layer. At least one of the first nonmagnetic layer and the second nonmagnetic layer is an oxide layer including magnesium (Mg) and a group 4 element. The group 4 element includes at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), and rutherfordium (Rf).

公开(公告)号：US20220302371A1

公开(公告)日：2022-09-22

申请号：US17463522

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Katsuhiko KOUI ,  Masaru TOKO ,  Soichi OIKAWA ,  Hideyuki SUGIYAMA

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22

Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.