MEMORY SYSTEM
    1.
    发明申请

    公开(公告)号:US20210074366A1

    公开(公告)日:2021-03-11

    申请号:US16802477

    申请日:2020-02-26

    Abstract: A memory controller performs a reference read on a plurality of memory cells using reference read voltages, generates a histogram indicating the number of memory cells in different threshold voltage bins based on results of the reference read, estimates actual read voltages based on the histogram and a first estimation function, and reads data using the actual read voltages. When reading of the data with the actual read voltages estimated using the first estimation function fails, the memory controller estimates actual read voltages using a second estimation function different from the first estimation function and reads the data with the actual read voltages estimated using the second estimation function.

    MEMORY SYSTEM
    2.
    发明申请

    公开(公告)号:US20210295942A1

    公开(公告)日:2021-09-23

    申请号:US17184120

    申请日:2021-02-24

    Abstract: A memory system includes a non-volatile memory having a plurality of memory cells and a memory controller. The memory controller is configured to generate a histogram indicating, with respect to each of a plurality of threshold voltage levels for multi-level cell (MLC) reading, a number of memory cells at the threshold voltage level, based on data read from the plurality of memory cells using a plurality of reference read voltages, estimate a plurality of read voltages for MLC reading of the plurality of memory cells as estimation values by inputting the histogram into a read voltage estimation model, determine, through MLC reading of the plurality of memory cells using a plurality of sets of read voltages, a set of read voltages for MLC reading as observation values, and update one or more parameters of the read voltage estimation model based on the estimation values and the observation values.

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