公开(公告)号：US20210065823A1

公开(公告)日：2021-03-04

申请号：US16806684

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Masato ENDO ,  Daisuke ARIZONO ,  Yoshikazu HARADA

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/14 ,  G11C16/12 ,  G11C16/04

Abstract: A semiconductor memory device includes a memory transistor, a word line, a peripheral circuit, and electrodes connected to the peripheral circuit. In response to a write command via the electrodes, the peripheral circuit can execute a first program operation of applying a first program voltage to the word line one time when the write command is one of an n1-th write command to an n2-th write command corresponding to the memory transistor; and execute a second program operation of applying a second program voltage to the first word line at least one time when the write command is one of an (n2+1)-th write command to an n3-th write command corresponding to the memory transistor. The second program voltage in a k-th second program operation is less than the first program voltage in a k-th first program operation.

公开(公告)号：US20240312542A1

公开(公告)日：2024-09-19

申请号：US18591856

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Masato ENDO ,  Haruo MIKI ,  Daiki SUGAWARA

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/20

CPC classification number: G11C16/3495 ,  G11C16/0483 ,  G11C16/20

Abstract: A semiconductor storage device includes a thermal history monitor and a determination circuit. The thermal history monitor outputs a thermal history based on a characteristic variation of a memory cell when a reliability detection command is input from a controller or a host device. The determination circuit determines package reliability based on the thermal history output from the thermal history monitor.