MEMORY SYSTEM
    1.
    发明申请

    公开(公告)号:US20230122474A1

    公开(公告)日:2023-04-20

    申请号:US18086206

    申请日:2022-12-21

    Abstract: A memory system connectable to a host, includes a non-volatile memory including a plurality of memory cell transistors and a controller configured to execute read operations on the non-volatile memory. The controller executes one or more first read operations on the non-volatile memory to obtain read data using read voltages that are determined from one of a plurality of entries stored in a shift table, and performs error correction on the read data, until the error correction is successful, and when the error correction on the read data is successful, records an index corresponding to the entry stored in the shift table that was used in obtaining the successfully error-corrected read data. The controller executes a second read operation on the non-volatile memory to obtain read data using read voltages that are determined from the entry stored in the shift table corresponding to the recorded index.

    Memory system
    2.
    发明授权

    公开(公告)号:US11874738B2

    公开(公告)日:2024-01-16

    申请号:US18086206

    申请日:2022-12-21

    CPC classification number: G06F11/1068 G11C16/0483 G11C16/20 G11C16/26

    Abstract: A memory system connectable to a host, includes a non-volatile memory including a plurality of memory cell transistors and a controller configured to execute read operations on the non-volatile memory. The controller executes one or more first read operations on the non-volatile memory to obtain read data using read voltages that are determined from one of a plurality of entries stored in a shift table, and performs error correction on the read data, until the error correction is successful, and when the error correction on the read data is successful, records an index corresponding to the entry stored in the shift table that was used in obtaining the successfully error-corrected read data. The controller executes a second read operation on the non-volatile memory to obtain read data using read voltages that are determined from the entry stored in the shift table corresponding to the recorded index.

    Memory system
    3.
    发明授权

    公开(公告)号:US11561854B2

    公开(公告)日:2023-01-24

    申请号:US17464552

    申请日:2021-09-01

    Abstract: A memory system connectable to a host, includes a non-volatile memory including a plurality of memory cell transistors and a controller configured to execute read operations on the non-volatile memory. The controller executes one or more first read operations on the non-volatile memory to obtain read data using read voltages that are determined from one of a plurality of entries stored in a shift table, and performs error correction on the read data, until the error correction is successful, and when the error correction on the read data is successful, records an index corresponding to the entry stored in the shift table that was used in obtaining the successfully error-corrected read data. The controller executes a second read operation on the non-volatile memory to obtain read data using read voltages that are determined from the entry stored in the shift table corresponding to the recorded index.

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