公开(公告)号：US20240297145A1

公开(公告)日：2024-09-05

申请号：US18592124

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Sadatoshi MURAKAMI

IPC: H01L23/00 ,  H01L21/762

CPC classification number: H01L24/80 ,  H01L21/76254 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: A method of manufacturing a semiconductor device according to one embodiment includes: forming, on a first substrate, a first layer having a refractive index lower than a refractive index of the first substrate; forming, on the first layer, a second layer having a refractive index lower than a refractive index of the first layer; forming a first circuit layer on the second layer; bonding the first and second substrate after forming the first circuit layer; irradiating a back surface of the first substrate with a laser beam after bonding the first substrate and the second substrate; and peeling the first substrate so that the first circuit layer remains on a side of the second substrate after irradiating the back surface of the first substrate with the laser beam.

公开(公告)号：US20240297045A1

公开(公告)日：2024-09-05

申请号：US18591438

申请日：2024-02-29

Applicant: Kioxia Corporation

Inventor： Yoshio MIZUTA ,  Sadatoshi MURAKAMI

IPC: H01L21/268 ,  H01L21/683 ,  H01L21/762 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065 ,  H10B80/00

CPC classification number: H01L21/268 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/7813 ,  H01L24/80 ,  H01L25/0657 ,  H10B80/00 ,  H01L2221/68386 ,  H01L2224/80006 ,  H01L2224/80948 ,  H01L2924/10158 ,  H01L2924/4015

Abstract: According to one embodiment, there is provided a method of manufacturing a semiconductor device. The method includes preparing a first substrate on which multiple projections distributed in a two-dimensional fashion are formed. The method includes stacking a first film over the multiple projections on the first substrate. The method includes stacking a second film on a second substrate. The method includes bonding a principal surface of the first film which is disposed on an opposite side of the first substrate to a principal surface of the second film which is disposed on an opposite side of the second substrate. The method includes performing irradiation with a laser beam from the first substrate. The method includes peeling the first substrate. A diameter of a spot area formed by the laser beam is larger than an average pitch between the projections arranged on the principal surface of the first substrate.

公开(公告)号：US20240251561A1

公开(公告)日：2024-07-25

申请号：US18440623

申请日：2024-02-13

Applicant: Kioxia Corporation

Inventor： Tomoo HISHIDA ,  Sadatoshi MURAKAMI ,  Ryota KATSUMATA ,  Masao IWASE

IPC: H10B43/35 ,  H01L21/8234 ,  H10B43/27 ,  H10B43/50

CPC classification number: H10B43/35 ,  H01L21/823437 ,  H10B43/27 ,  H10B43/50

Abstract: A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate.

公开(公告)号：US20230088310A1

公开(公告)日：2023-03-23

申请号：US17991694

申请日：2022-11-21

Applicant: KIOXIA CORPORATION

Inventor： Tomoo HISHIDA ,  Sadatoshi MURAKAMI ,  Ryota KATSUMATA ,  Masao IWASE

IPC: H01L27/1157 ,  H01L21/8234 ,  H01L27/11575 ,  H01L27/11582

Abstract: A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy cells of the first and second dummy regions that are at a same level above the semiconductor substrate.

公开(公告)号：US20240321819A1

公开(公告)日：2024-09-26

申请号：US18592860

申请日：2024-03-01

Applicant: Kioxia Corporation

Inventor： Miki TOSHIMA ,  Sadatoshi MURAKAMI ,  Atsushi OGA

IPC: H01L23/00 ,  H10B80/00

CPC classification number: H01L24/80 ,  H01L24/08 ,  H10B80/00 ,  H01L2224/08145 ,  H01L2224/80006 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes: preparing a first substrate provided with a first film; forming a second film on or above a second substrate; forming a third film on or above the second film; forming a fourth film on or above the third film; forming a stacked body by bonding a main surface of the first film and a main surface of the fourth film; performing irradiation with a laser beam from a side of the second substrate of the stacked body; and separating the second substrate in a state of including at least portion of the second film. The second film and the fourth film each includes a first material. The third film includes a second material different from the first material. The second film and the third film have different composition. The fourth film and the third film have different composition.