公开(公告)号：US20210296352A1

公开(公告)日：2021-09-23

申请号：US17004777

申请日：2020-08-27

Applicant: KIOXIA CORPORATION

Inventor： Yoichi MINEMURA ,  Kensei TAKAHASHI ,  Takashi ASANO

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor storage device includes first and second stacked bodies, a first semiconductor layer, a first charge storage layer, a conductive layer, and a first silicon oxide layer. The first stacked body includes first insulation layers and first gate electrode layers that are alternately stacked in a first direction. The first semiconductor layer extends in the first stacked body in the first direction. The first charge storage layer is provided between the first semiconductor layer and the first gate electrode layers. The conductive layer is provided between the first stacked body and the second stacked body and extends in the first direction and a second direction. The first silicon oxide layer is provided between the conductive layer and the first gate electrode layers. The first silicon oxide layer containing an impurity being at least one of phosphorus, boron, carbon, and fluorine.

公开(公告)号：US20220081772A1

公开(公告)日：2022-03-17

申请号：US17462673

申请日：2021-08-31

Applicant: Kioxia Corporation

Inventor： Takashi ASANO

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458

Abstract: According to one embodiment, a substrate processing apparatus includes: an inner tube extending in a first direction and configured to accommodate a plurality of substrates; an outer tube configured to surround the inner tube and provide an airtight sealed space; a nozzle disposed in the inner tube; a gas supply configured to supply a processing gas to the inner tube via the nozzle; at least one slit provided on a side surface of the inner tube facing the nozzle; and an exhaust port coupled to the outer tube. Along the first direction, an opening area of a central portion of the slit is larger than an opening area of end portions of the slit.