公开(公告)号：US20240268121A1

公开(公告)日：2024-08-08

申请号：US18595731

申请日：2024-03-05

Applicant: Kioxia Corporation

Inventor： Masaharu MIZUTANI ,  Masao SHINGU ,  Kensei TAKAHASHI

IPC: H10B43/35 ,  H10B43/27

CPC classification number: H10B43/35 ,  H10B43/27

Abstract: A semiconductor memory device according to an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer including at least one metal element selected from a group consisting of tungsten (W), molybdenum (Mo), and cobalt (Co); a charge storage layer provided between the semiconductor layer and the gate electrode layer; and a first insulating layer provided between the charge storage layer and the gate electrode layer, the first insulating layer including a first region, the first region including aluminum (Al) and oxygen (O), the first insulating layer being in contact with the gate electrode layer.

公开(公告)号：US20240422982A1

公开(公告)日：2024-12-19

申请号：US18740858

申请日：2024-06-12

Applicant: Kioxia Corporation

Inventor： Daisuke KITAGAWA ,  Kensei TAKAHASHI

IPC: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device according to the present embodiment includes a first insulator, a conductive layer, and a film. The film is provided between the first insulator and the conductive layer and contains carbon (C) or silicon (Si). The semiconductor device further comprises a stacked body in which insulating layers and the conductive layers are alternately stacked in a first direction, a semiconductor layer disposed in the first direction in the stacked body, a second insulator disposed in the first direction between the stacked body and the semiconductor layer, a third insulator disposed in the first direction between the stacked body and the second insulator, and a fourth insulator disposed in the first direction between the stacked body and the third insulator. The first insulator is disposed between the conductive layers and the insulating layers and between the conductive layers and the fourth insulator.

公开(公告)号：US20210296352A1

公开(公告)日：2021-09-23

申请号：US17004777

申请日：2020-08-27

Applicant: KIOXIA CORPORATION

Inventor： Yoichi MINEMURA ,  Kensei TAKAHASHI ,  Takashi ASANO

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor storage device includes first and second stacked bodies, a first semiconductor layer, a first charge storage layer, a conductive layer, and a first silicon oxide layer. The first stacked body includes first insulation layers and first gate electrode layers that are alternately stacked in a first direction. The first semiconductor layer extends in the first stacked body in the first direction. The first charge storage layer is provided between the first semiconductor layer and the first gate electrode layers. The conductive layer is provided between the first stacked body and the second stacked body and extends in the first direction and a second direction. The first silicon oxide layer is provided between the conductive layer and the first gate electrode layers. The first silicon oxide layer containing an impurity being at least one of phosphorus, boron, carbon, and fluorine.