公开(公告)号：US12020892B2

公开(公告)日：2024-06-25

申请号：US16805030

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yusuke Goki

IPC: H01J37/08 ,  H01J37/305 ,  H01L21/3065

CPC classification number: H01J37/08 ,  H01J37/3053 ,  H01L21/3065 ,  H01J2237/3151

Abstract: An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.