公开(公告)号：US20230066699A1

公开(公告)日：2023-03-02

申请号：US17809114

申请日：2022-06-27

Applicant: KIOXIA CORPORATION

Inventor： Zhao LYU ,  Akio SUGAHARA ,  Takehisa KUROSAWA ,  Yuji NAGAI ,  Hisashi FUJIKAWA

IPC: G11C7/10 ,  G11C8/06

Abstract: A memory system includes semiconductor memory devices and a control device. Each of the semiconductor memory devices includes a first pad to which a first signal is input, a second pad to which a second signal is input, a third pad to which a third signal is input, a memory cell array, a sense amplifier, and a data register. In a first mode, after the first signal is switched, a command set instructing a data out operation is input via the second pad. In a second mode, after the first signal is switched, the command is input via at least the third pad. The control device executes a first operation assigning different addresses to the respective semiconductor memory devices and a second operation causing the modes of the respective semiconductor memory devices to be switched from the first to the second mode.