公开(公告)号：US11156548B2

公开(公告)日：2021-10-26

申请号：US15938270

申请日：2018-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Manh Nguyen ,  Phillip Atkins ,  Alexander Kuznetsov ,  Liequan Lee ,  Natalia Malkova ,  Paul Aoyagi ,  Mikhail Sushchik ,  Dawei Hu ,  Houssam Chouaib

IPC: G01N21/21 ,  G01B11/06 ,  G03F7/20 ,  G05B13/02

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

公开(公告)号：US20190178788A1

公开(公告)日：2019-06-13

申请号：US15938270

申请日：2018-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Manh Nguyen ,  Phillip Atkins ,  Alexander Kuznetsov ,  Liequan Lee ,  Natalia Malkova ,  Paul Aoyagi ,  Mikhail Sushchik ,  Dawei Hu ,  Houssam Chouaib

IPC: G01N21/21 ,  G01B11/06 ,  G05B13/02 ,  G03F7/20

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.