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公开(公告)号：US10429296B2
公开(公告)日：2019-10-01
申请号：US16040798
申请日：2018-07-20
Applicant: KLA-Tencor Corporation
Inventor： Mark A. Neil , Mikhail Sushchik , Natalia Malkova
Abstract: A metrology system includes a controller coupled to a detector to generate a detection signal based on the reflection of an illumination beam from a multilayer film stack. The multilayer film stack may include one or more zones with a repeating pattern of two or more materials. The controller may generate a model of reflection of the illumination beam by modeling the zones as thick films having zone thicknesses and effective permittivity values using an effective medium model relating the effective permittivity values of the zones to permittivity values and volume fractions of constituent materials. The controller may further determine values of the zone thicknesses and the volume fractions using a regression of the detection signal based on the effective medium model and further determine average thickness values of the constituent materials based on the number of films, the zone thicknesses, the volume fractions, and the effective permittivity values.
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公开(公告)号：US11156548B2
公开(公告)日：2021-10-26
申请号：US15938270
申请日：2018-03-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Manh Nguyen , Phillip Atkins , Alexander Kuznetsov , Liequan Lee , Natalia Malkova , Paul Aoyagi , Mikhail Sushchik , Dawei Hu , Houssam Chouaib
Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
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公开(公告)号：US20190178788A1
公开(公告)日：2019-06-13
申请号：US15938270
申请日：2018-03-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Manh Nguyen , Phillip Atkins , Alexander Kuznetsov , Liequan Lee , Natalia Malkova , Paul Aoyagi , Mikhail Sushchik , Dawei Hu , Houssam Chouaib
Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
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公开(公告)号：US20190033211A1
公开(公告)日：2019-01-31
申请号：US16040798
申请日：2018-07-20
Applicant: KLA-Tencor Corporation
Inventor： Mark A. Neil , Mikhail Sushchik , Natalia Malkova
CPC classification number: G01N21/39 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/211 , G01N21/4788 , G01N21/8851 , G01N21/956 , G01N21/95623 , G01N2021/8438 , G01N2021/8883 , G01N2201/068 , G02B27/58 , G03F7/70633
Abstract: A metrology system includes a controller coupled to a detector to generate a detection signal based on the reflection of an illumination beam from a multilayer film stack. The multilayer film stack may include one or more zones with a repeating pattern of two or more materials. The controller may generate a model of reflection of the illumination beam by modeling the zones as thick films having zone thicknesses and effective permittivity values using an effective medium model relating the effective permittivity values of the zones to permittivity values and volume fractions of constituent materials. The controller may further determine values of the zone thicknesses and the volume fractions using a regression of the detection signal based on the effective medium model and further determine average thickness values of the constituent materials based on the number of films, the zone thicknesses, the volume fractions, and the effective permittivity values.
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