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公开(公告)号：US09595481B1
公开(公告)日：2017-03-14
申请号：US14464640
申请日：2014-08-20
Applicant: KLA-Tencor Corporation
Inventor： Natalia Malkova , Leonid Poslavsky , Ming Di , Qiang Zhao , Dawei Hu
CPC classification number: H01L22/12 , G01N21/211 , G01N21/8422 , G01N21/9501 , G01N2021/8438 , G01N2021/95676 , G01R31/2601
Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.
Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学分散模型包括具有对未完成的多层半导体晶片的层的带隙敏感的连续第一导数的连续Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。
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Patent Agency Ranking
公开(公告)号：US11378451B2
公开(公告)日：2022-07-05
申请号：US15672120
申请日：2017-08-08
Applicant: KLA-Tencor Corporation
Inventor： Tianhan Wang , Aaron Rosenberg , Dawei Hu , Alexander Kuznetsov , Manh Dang Nguyen , Stilian Pandev , John Lesoine , Qiang Zhao , Liequan Lee , Houssam Chouaib , Ming Di , Torsten R. Kaack , Andrei V. Shchegrov , Zhengquan Tan
Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.
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公开(公告)号：US11156548B2
公开(公告)日：2021-10-26
申请号：US15938270
申请日：2018-03-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Manh Nguyen , Phillip Atkins , Alexander Kuznetsov , Liequan Lee , Natalia Malkova , Paul Aoyagi , Mikhail Sushchik , Dawei Hu , Houssam Chouaib
Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
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公开(公告)号：US20190178788A1
公开(公告)日：2019-06-13
申请号：US15938270
申请日：2018-03-28
Applicant: KLA-TENCOR CORPORATION
Inventor： Manh Nguyen , Phillip Atkins , Alexander Kuznetsov , Liequan Lee , Natalia Malkova , Paul Aoyagi , Mikhail Sushchik , Dawei Hu , Houssam Chouaib
Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.
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公开(公告)号：US20190041266A1
公开(公告)日：2019-02-07
申请号：US15672120
申请日：2017-08-08
Applicant: KLA-Tencor Corporation
Inventor： Tianhan Wang , Aaron Rosenberg , Dawei Hu , Alexander Kuznetsov , Manh Dang Nguyen , Stilian Pandev , John Lesoine , Qiang Zhao , Liequan Lee , Houssam Chouaib , Ming Di , Torsten R. Kaack , Andrei V. Shchegrov , Zhengquan Tan
Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.
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公开(公告)号：US10410935B1
公开(公告)日：2019-09-10
申请号：US15428835
申请日：2017-02-09
Applicant: KLA-Tencor Corporation
Inventor： Natalia Malkova , Leonid Poslavsky , Ming Di , Qiang Zhao , Dawei Hu
IPC: H01L21/66 , G01N21/27 , G01R31/28 , G01R31/308
Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.
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