System and method for cathodoluminescence-based semiconductor wafer defect inspection

    公开(公告)号:US10018579B1

    公开(公告)日:2018-07-10

    申请号:US15255024

    申请日:2016-09-01

    CPC classification number: G01N23/2254 G01N2223/6116 G01N2223/646

    Abstract: A system for measuring cathodoluminescence from a substrate includes an electron beam source configured to generate an electron beam, a sample stage configured to secure a sample and an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through onto a portion of the sample. The system also includes a set of guide optics located at a position within or below the electron-optical column and a set of collection optics, wherein the set of guide optics captures cathodoluminescent light emitted from the sample in response to the electron beam and directs the cathodoluminescent light to the set of collection optics. In addition, the system includes a detector. The set of collection optics is configured to image the cathodoluminescent light onto the detector.

    Method and system for aberration correction in an electron beam system

    公开(公告)号:US10224177B2

    公开(公告)日:2019-03-05

    申请号:US15148331

    申请日:2016-05-06

    Abstract: A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflector assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly configured to detect electrons emanating from the surface of the sample.

    Method and System for Aberration Correction in an Electron Beam System
    4.
    发明申请
    Method and System for Aberration Correction in an Electron Beam System 审中-公开
    电子束系统中畸变校正的方法与系统

    公开(公告)号:US20160329189A1

    公开(公告)日:2016-11-10

    申请号:US15148331

    申请日:2016-05-06

    CPC classification number: H01J37/28 H01J37/1474 H01J2237/1534 H01J2237/1536

    Abstract: A scanning electron microscopy system is disclosed. The system includes an electron beam source configured to generate a primary electron beam. The system includes a sample stage configured to secure a sample. The system includes a set of electron-optical elements configured to direct at least a portion of the primary electron beam onto a portion of the sample. The set of electron-optical elements includes an upper deflector assembly and a lower deflector assembly. The upper deflect assembly is configured to compensate for chromatic aberration in the primary electron beam caused by the lower deflector assembly. In addition, the system includes a detector assembly positioned configured to detect electrons emanating from the surface of the sample.

    Abstract translation: 公开了一种扫描电子显微镜系统。 该系统包括被配置为产生一次电子束的电子束源。 该系统包括配置成固定样品的样品台。 该系统包括一组电子 - 光学元件,其被配置为将至少一部分一次电子束引导到样品的一部分上。 该组电子 - 光学元件包括上偏转器组件和下偏转器组件。 上偏转组件被配置为补偿由下偏转器组件引起的一次电子束中的色像差。 此外,该系统包括检测器组件,其被配置成检测从样品表面发出的电子。

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