Critical dimension uniformity monitoring for extreme ultra-violet reticles

    公开(公告)号:US10288415B2

    公开(公告)日:2019-05-14

    申请号:US15826529

    申请日:2017-11-29

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES
    4.
    发明申请
    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES 有权
    极端超紫外线反应的关键尺寸均匀性监测

    公开(公告)号:US20150144798A1

    公开(公告)日:2015-05-28

    申请号:US14390834

    申请日:2013-04-16

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    Abstract translation: 公开了使用检查工具便利检查样品的方法和装置。 使用检查工具来获得来自EUV掩模版的图像或信号,其指定EUV掩模版之间的强度变化,并且将该强度变化转换为CD变化,其消除光斑校正CD变化,以产生临界尺寸均匀性 (CDU)图,而没有闪光校正CD变体。 这种去除的光斑校正CD变化源自用于制造EUV掩模版的设计数据,并且这种闪光校正CD变化通常被设计为补偿在光刻工艺期间在光刻工具的视场(FOV)上存在的闪光差异。 CDU图存储在一个或多个存储设备中和/或显示在例如检测工具或光刻系统的显示设备上。

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