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    Integrated Multi-Pass Inspection
    1.
    发明申请
    Integrated Multi-Pass Inspection 有权
    综合多通检查

    公开(公告)号：US20160093040A1

    公开(公告)日：2016-03-31

    申请号：US14890880

    申请日：2014-05-14

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Weston L. Sousa ,  Yalin Xiong ,  Rui-Fang Shi

    IPC: G06T7/00 ,  G01N21/88 ,  G03F1/84

    CPC classification number: G01N21/8851 ,  G01N21/94 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/558 ,  G01N2021/8867 ,  G01N2021/95676 ,  G01N2201/12 ,  G03F1/84 ,  G06T7/0004 ,  G06T7/001 ,  G06T7/10 ,  G06T7/136 ,  G06T2207/30148

    Abstract: Methods and systems for integrated multi-pass reticle inspection are provided. One method for inspecting a reticle includes acquiring at least first, second, and third images for the reticle. The first image is a substantially high resolution image of light transmitted by the reticle. The second image is a substantially high resolution image of light reflected from the reticle. The third image is an image of light transmitted by the reticle that is acquired with a substantially low numerical aperture. The method also includes detecting defects on the reticle using at least the first, second, and third images for the reticle in combination.

    Abstract translation: 提供了综合多通道掩模检测的方法和系统。 用于检查掩模版的一种方法包括获取用于掩模版的至少第一，第二和第三图像。 第一个图像是由光罩传输的光的基本上高分辨率的图像。 第二个图像是从掩模版反射的光的基本上高分辨率的图像。 第三图像是由具有基本上低的数值孔径获得的掩模版传输的光的图像。 该方法还包括组合使用至少第一，第二和第三图像来检测掩模版上的缺陷。

    Inspection of photomasks by comparing two photomasks
    3.
    发明授权
    Inspection of photomasks by comparing two photomasks 有权

    公开(公告)号：US10451563B2

    公开(公告)日：2019-10-22

    申请号：US15438588

    申请日：2017-02-21

    Applicant: KLA-Tencor Corporation

    Inventor： Weston L. Sousa ,  Yalin Xiong ,  Carl E. Hess

    IPC: G03F1/84 ,  G01N21/956 ,  G01N21/88 ,  G06T7/00

    Abstract: Disclosed are methods and systems for inspecting photolithographic reticles. A first and second reticle that were fabricated with a same design are obtained. A first and second reticle image of the first and second reticles are also obtained. The first reticle image is compared to the second reticle image to output a difference image having a plurality of difference events corresponding to candidate defects on either the first or second reticle. An inspection report of the candidate defects is then generated.

    INSPECTION OF PHOTOMASKS BY COMPARING TWO PHOTOMASKS
    4.
    发明申请
    INSPECTION OF PHOTOMASKS BY COMPARING TWO PHOTOMASKS 审中-公开

    公开(公告)号：US20180238816A1

    公开(公告)日：2018-08-23

    申请号：US15438588

    申请日：2017-02-21

    Applicant: KLA-Tencor Corporation

    Inventor： Weston L. Sousa ,  Yalin Xiong ,  CarlE. E. Hess

    IPC: G01N21/956 ,  G01N21/88 ,  G06T7/00 ,  G03F1/84

    Abstract: Disclosed are methods and systems for inspecting photolithographic reticles. A first and second reticle that were fabricated with a same design are obtained. A first and second reticle image of the first and second reticles are also obtained. The first reticle image is compared to the second reticle image to output a difference image having a plurality of difference events corresponding to candidate defects on either the first or second reticle. An inspection report of the candidate defects is then generated.

    Critical dimension uniformity monitoring for extreme ultra-violet reticles
    5.
    发明授权
    Critical dimension uniformity monitoring for extreme ultra-violet reticles 有权

    公开(公告)号：US10288415B2

    公开(公告)日：2019-05-14

    申请号：US15826529

    申请日：2017-11-29

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Alex Pokrovskiy ,  Abdurrahman Sezginer ,  Weston L. Sousa

    IPC: G01B11/24 ,  G03F1/22 ,  G03F1/70 ,  G01B11/02 ,  G01N21/88

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES
    6.
    发明申请
    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES 有权
    极端超紫外线反应的关键尺寸均匀性监测

    公开(公告)号：US20150144798A1

    公开(公告)日：2015-05-28

    申请号：US14390834

    申请日：2013-04-16

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Alex Pokrovskiy ,  Abdurrahman Sezginer ,  Weston L. Sousa

    IPC: G01B11/24 ,  G01N21/88 ,  G01B11/02

    CPC classification number: G01B11/24 ,  G01B11/02 ,  G01B2210/56 ,  G01N21/8806 ,  G01N2201/06113 ,  G03F1/22 ,  G03F1/70

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    Abstract translation: 公开了使用检查工具便利检查样品的方法和装置。 使用检查工具来获得来自EUV掩模版的图像或信号，其指定EUV掩模版之间的强度变化，并且将该强度变化转换为CD变化，其消除光斑校正CD变化，以产生临界尺寸均匀性 （CDU）图，而没有闪光校正CD变体。 这种去除的光斑校正CD变化源自用于制造EUV掩模版的设计数据，并且这种闪光校正CD变化通常被设计为补偿在光刻工艺期间在光刻工具的视场（FOV）上存在的闪光差异。 CDU图存储在一个或多个存储设备中和/或显示在例如检测工具或光刻系统的显示设备上。

    AUTO-FOCUS SYSTEM AND METHODS FOR DIE-TO-DIE INSPECTION
    7.
    发明申请
    AUTO-FOCUS SYSTEM AND METHODS FOR DIE-TO-DIE INSPECTION 有权
    自动对焦系统和DIE-TO-DIE检测方法

    公开(公告)号：US20150029499A1

    公开(公告)日：2015-01-29

    申请号：US14336875

    申请日：2014-07-21

    Applicant: KLA-Tencor Corporation

    Inventor： Michael J. Wright ,  Zhengcheng Lin ,  Wilfred L. Ghonsalves ,  Daniel L. Belin ,  Weston L. Sousa

    IPC: G01N21/88 ,  G01N21/956 ,  G01N21/95

    CPC classification number: G01N21/956 ,  G01N21/9501 ,  G01N2021/95676 ,  G03F1/84 ,  G03F7/7065 ,  H01L22/12

    Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.

    Abstract translation: 公开了用于检测具有多个相同设计区域的半导体样品中的缺陷的方法和装置。 检查工具用于构建样品的第一条带的初始聚焦轨迹。 然后，检查工具用于在收集自动对焦数据的同时按照第一幅的初始对焦轨迹扫描第一幅。 基于自动对焦数据生成第一条中每个相同设计区域的z偏移测量矢量。 构造一个校正的z偏移向量，用于检查第一条带的检查工具。 构造校正的z偏移向量是基于组合第一幅中两个或多个相同设计区域的z偏移测量向量，使得校正的z偏移矢量对于两个或更多个相同位置的每组相同地指定相同的z偏移， 更加相同的设计区域。

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