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    Image based specimen process control
    2.
    发明授权
    Image based specimen process control 有权

    公开(公告)号：US10181185B2

    公开(公告)日：2019-01-15

    申请号：US15402197

    申请日：2017-01-09

    Applicant: KLA-Tencor Corporation

    Inventor： Allen Park ,  Lisheng Gao ,  Ashok Kulkarni ,  Saibal Banerjee ,  Ping Gu ,  Songnian Rong ,  Kris Bhaskar

    IPC: G06K9/00 ,  G06T7/00 ,  G01N21/95

    Abstract: Methods and systems for detecting anomalies in images of a specimen are provided. One system includes one or more computer subsystems configured for acquiring images generated of a specimen by an imaging subsystem. The computer subsystem(s) are also configured for determining one or more characteristics of the acquired images. In addition, the computer subsystem(s) are configured for identifying anomalies in the images based on the one or more determined characteristics without applying a defect detection algorithm to the images or the one or more characteristics of the images.

    Determining One or More Characteristics of a Pattern of Interest on a Specimen
    4.
    发明申请
    Determining One or More Characteristics of a Pattern of Interest on a Specimen 审中-公开
    确定样本的兴趣模式的一个或多个特征

    公开(公告)号：US20170059491A1

    公开(公告)日：2017-03-02

    申请号：US15243809

    申请日：2016-08-22

    Applicant: KLA-Tencor Corporation

    Inventor： Brian Duffy ,  Ashok Kulkarni ,  Michael Lennek ,  Allen Park

    IPC: G01N21/956 ,  G01N21/95

    CPC classification number: G01N21/95607 ,  G01N21/9501 ,  G01N2021/95615 ,  G01N2021/95676 ,  G06K9/64 ,  G06T7/001 ,  G06T2207/30148 ,  H01L22/12 ,  H01L22/20

    Abstract: Methods and systems for determining characteristic(s) of patterns of interest (POIs) are provided. One system is configured to acquire output of an inspection system generated at the POI instances without detecting defects at the POI instances. The output is then used to generate a selection of the POI instances. The system then acquires output from an output acquisition subsystem for the selected POI instances. The system also determines characteristic(s) of the POI using the output acquired from the output acquisition subsystem.

    Abstract translation: 提供了用于确定感兴趣模式（POI）特征的方法和系统。 一个系统被配置为获取在POI实例处生成的检查系统的输出，而不检测POI实例的缺陷。 然后，输出用于生成POI实例的选择。 然后，系统从所选POI实例的输出采集子系统获取输出。 该系统还使用从输出采集子系统获得的输出来确定POI的特性。

    Detecting defects on a wafer
    5.
    发明授权
    Detecting defects on a wafer 有权
    检测晶圆上的缺陷

    公开(公告)号：US09355208B2

    公开(公告)日：2016-05-31

    申请号：US14321565

    申请日：2014-07-01

    Applicant: KLA-Tencor Corporation

    Inventor： Eugene Shifrin ,  Ashok Kulkarni ,  Kris Bhaskar ,  Graham Michael Lynch ,  John Raymond Jordan, III ,  Chwen-Jiann Fang

    IPC: G06F17/50 ,  G01N21/95 ,  H01L21/66

    CPC classification number: G06F17/5081 ,  G01N21/9501 ,  G06F17/5045 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes determining locations of all instances of a weak geometry in a design for a wafer. The locations include random, aperiodic locations. The weak geometry includes one or more features that are more prone to defects than other features in the design. The method also includes scanning the wafer with a wafer inspection system to thereby generate output for the wafer with one or more detectors of the wafer inspection system. In addition, the method includes detecting defects in at least one instance of the weak geometry based on the output generated at two or more instances of the weak geometry in a single die on the wafer.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括在晶片的设计中确定弱几何的所有实例的位置。 这些位置包括随机，不定期的位置。 弱几何包括与设计中的其他特征相比更容易出现缺陷的一个或多个特征。 该方法还包括用晶片检查系统扫描晶片，从而通过晶片检查系统的一个或多个检测器产生用于晶片的输出。 此外，该方法包括基于在晶片上的单个管芯中的弱几何形状的两个或多个实例处产生的输出来检测弱几何形状的至少一个实例中的缺陷。

    Generating simulated output for a specimen
    7.
    发明授权
    Generating simulated output for a specimen 有权

    公开(公告)号：US10043261B2

    公开(公告)日：2018-08-07

    申请号：US15402094

    申请日：2017-01-09

    Applicant: KLA-Tencor Corporation

    Inventor： Kris Bhaskar ,  Jing Zhang ,  Grace Hsiu-Ling Chen ,  Ashok Kulkarni ,  Laurent Karsenti

    IPC: G06K9/00 ,  G06T7/00 ,  G03F1/84 ,  G03F1/86 ,  G03F7/20

    Abstract: Methods and systems for generating simulated output for a specimen are provided. One method includes acquiring information for a specimen with one or more computer systems. The information includes at least one of an actual optical image of the specimen, an actual electron beam image of the specimen, and design data for the specimen. The method also includes inputting the information for the specimen into a learning based model. The learning based model is included in one or more components executed by the one or more computer systems. The learning based model is configured for mapping a triangular relationship between optical images, electron beam images, and design data, and the learning based model applies the triangular relationship to the input to thereby generate simulated images for the specimen.

    Methods and Systems for Detecting Repeating Defects on Semiconductor Wafers Using Design Data
    10.
    发明申请
    Methods and Systems for Detecting Repeating Defects on Semiconductor Wafers Using Design Data 有权
    使用设计数据检测半导体晶片重复缺陷的方法和系统

    公开(公告)号：US20150012900A1

    公开(公告)日：2015-01-08

    申请号：US14321565

    申请日：2014-07-01

    Applicant: KLA-Tencor Corporation

    Inventor： Eugene Shifrin ,  Ashok Kulkarni ,  Kris Bhaskar ,  Graham Michael Lynch ,  John Raymond Jordan, III ,  Chwen-Jiann Fang

    IPC: H01L27/02 ,  G06F17/50 ,  G01N21/95

    CPC classification number: G06F17/5081 ,  G01N21/9501 ,  G06F17/5045 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes determining locations of all instances of a weak geometry in a design for a wafer. The locations include random, aperiodic locations. The weak geometry includes one or more features that are more prone to defects than other features in the design. The method also includes scanning the wafer with a wafer inspection system to thereby generate output for the wafer with one or more detectors of the wafer inspection system. In addition, the method includes detecting detects in at least one instance of the weak geometry based on the output generated at two or more instances of the weak geometry in a single die on the wafer.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括在晶片的设计中确定弱几何的所有实例的位置。 这些位置包括随机，不定期的位置。 弱几何包括与设计中的其他特征相比更容易出现缺陷的一个或多个特征。 该方法还包括用晶片检查系统扫描晶片，从而通过晶片检查系统的一个或多个检测器产生用于晶片的输出。 此外，该方法包括基于在晶片上的单个管芯中的弱几何形状的两个或多个实例处产生的输出来检测至少一个弱几何形状的检测。

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