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    Systems and methods for detecting defects on a wafer
    1.
    发明授权
    Systems and methods for detecting defects on a wafer 有权

    公开(公告)号：US10605744B2

    公开(公告)日：2020-03-31

    申请号：US15865130

    申请日：2018-01-08

    Applicant: KLA-Tencor Corporation

    Inventor： Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    IPC: G01N21/95 ,  H01L21/66 ,  G01N21/88

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    Systems and Methods for Detecting Defects on a Wafer
    2.
    发明申请
    Systems and Methods for Detecting Defects on a Wafer 有权
    用于检测晶片缺陷的系统和方法

    公开(公告)号：US20130250287A1

    公开(公告)日：2013-09-26

    申请号：US13900465

    申请日：2013-05-22

    Applicant: KLA-Tencor Corporation

    Inventor： Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    IPC: G01N21/95

    CPC classification number: G01N21/9501 ,  G01N2021/887 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括通过使用检查系统的第一和第二光学状态的检查系统扫描晶片来产生晶片的输出。 第一和第二光学状态由检查系统的至少一个光学参数的不同值来定义。 该方法还包括使用使用第二光学状态产生的输出使用第一光学状态产生的输出和晶片的第二图像数据为晶片产生第一图像数据。 此外，该方法包括将第一图像数据和对应于晶片上基本相同位置的第二图像数据组合，从而产生用于晶片的附加图像数据。 该方法还包括使用附加图像数据检测晶片上的缺陷。

    SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER
    3.
    发明申请
    SYSTEMS AND METHODS FOR DETECTING DEFECTS ON A WAFER 审中-公开

    公开(公告)号：US20180202943A1

    公开(公告)日：2018-07-19

    申请号：US15865130

    申请日：2018-01-08

    Applicant: KLA-Tencor Corporation

    Inventor： Lu Chen ,  Jason Kirkwood ,  Mohan Mahadevan ,  James A. Smith ,  Lisheng Gao ,  Junqing (Jenny) Huang ,  Tao Luo ,  Richard Wallingford

    IPC: G01N21/95 ,  H01L21/66 ,  G01N21/88

    CPC classification number: G01N21/9501 ,  G01N2021/887 ,  H01L22/12

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

    DEFECT SIGNAL TO NOISE ENHANCEMENT BY REDUCING DIE TO DIE PROCESS NOISE
    5.
    发明申请
    DEFECT SIGNAL TO NOISE ENHANCEMENT BY REDUCING DIE TO DIE PROCESS NOISE 审中-公开

    公开(公告)号：US20170169552A1

    公开(公告)日：2017-06-15

    申请号：US15352664

    申请日：2016-11-16

    Applicant: KLA-Tencor Corporation

    Inventor： Bjorn Brauer ,  James A. Smith

    IPC: G06T5/40

    CPC classification number: G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

    Abstract: Gray level histograms for a test image and a reference image are adjusted by histogram scaling. Parameters from the histogram scaling are applied to the test image and the reference image. After the parameters are applied, the reference image and the test image are compared to produce a difference image, such as by subtracting the reference image from the test image. Noise in the difference image can be reduced, which improves defect identification in the difference image. In addition, noisy structures in the difference image which are elongated in vertical or horizontal direction can be found. If the noise exceeds a certain threshold, the structures may not be inspected.

    Defect signal to noise enhancement by reducing die to die process noise
    6.
    发明授权
    Defect signal to noise enhancement by reducing die to die process noise 有权

    公开(公告)号：US10186028B2

    公开(公告)日：2019-01-22

    申请号：US15352664

    申请日：2016-11-16

    Applicant: KLA-Tencor Corporation

    Inventor： Bjorn Brauer ,  James A. Smith

    IPC: G06K9/00 ,  G06T7/00

    Abstract: Gray level histograms for a test image and a reference image are adjusted by histogram scaling. Parameters from the histogram scaling are applied to the test image and the reference image. After the parameters are applied, the reference image and the test image are compared to produce a difference image, such as by subtracting the reference image from the test image. Noise in the difference image can be reduced, which improves defect identification in the difference image. In addition, noisy structures in the difference image which are elongated in vertical or horizontal direction can be found. If the noise exceeds a certain threshold, the structures may not be inspected.

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