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1.
公开(公告)号:US09110039B2
公开(公告)日:2015-08-18
申请号:US14336875
申请日:2014-07-21
Applicant: KLA-Tencor Corporation
Inventor: Michael J. Wright , Zhengcheng Lin , Wilfred L. Ghonsalves , Daniel L. Belin , Weston L. Sousa
IPC: G01N21/00 , G01N21/956 , G01N21/95
CPC classification number: G01N21/956 , G01N21/9501 , G01N2021/95676 , G03F1/84 , G03F7/7065 , H01L22/12
Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.
Abstract translation: 公开了用于检测具有多个相同设计区域的半导体样品中的缺陷的方法和装置。 检查工具用于构建样品的第一条带的初始聚焦轨迹。 然后,检查工具用于在收集自动对焦数据的同时按照第一幅的初始对焦轨迹扫描第一幅。 基于自动对焦数据生成第一条中每个相同设计区域的z偏移测量矢量。 构造一个校正的z偏移向量,用于检查第一条带的检查工具。 构造校正的z偏移向量是基于组合第一幅中两个或多个相同设计区域的z偏移测量向量,使得校正的z偏移矢量对于两个或更多个相同位置的每组相同地指定相同的z偏移, 更加相同的设计区域。
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2.
公开(公告)号:US20150029499A1
公开(公告)日:2015-01-29
申请号:US14336875
申请日:2014-07-21
Applicant: KLA-Tencor Corporation
Inventor: Michael J. Wright , Zhengcheng Lin , Wilfred L. Ghonsalves , Daniel L. Belin , Weston L. Sousa
IPC: G01N21/88 , G01N21/956 , G01N21/95
CPC classification number: G01N21/956 , G01N21/9501 , G01N2021/95676 , G03F1/84 , G03F7/7065 , H01L22/12
Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.
Abstract translation: 公开了用于检测具有多个相同设计区域的半导体样品中的缺陷的方法和装置。 检查工具用于构建样品的第一条带的初始聚焦轨迹。 然后,检查工具用于在收集自动对焦数据的同时按照第一幅的初始对焦轨迹扫描第一幅。 基于自动对焦数据生成第一条中每个相同设计区域的z偏移测量矢量。 构造一个校正的z偏移向量,用于检查第一条带的检查工具。 构造校正的z偏移向量是基于组合第一幅中两个或多个相同设计区域的z偏移测量向量,使得校正的z偏移矢量对于两个或更多个相同位置的每组相同地指定相同的z偏移, 更加相同的设计区域。
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