公开(公告)号：US11237120B2

公开(公告)日：2022-02-01

申请号：US16934123

申请日：2020-07-21

Applicant: KLA-Tencor Corporation

Inventor： Vincent Immer ,  Tal Marciano ,  Etay Lavert

IPC: G01N21/45 ,  G01N21/95 ,  G01N21/956 ,  G01N21/55 ,  G03F7/20 ,  G01N21/31 ,  G02B21/00 ,  G02B21/08 ,  G01B11/06 ,  G01J3/453 ,  G02B21/06 ,  G02B21/18 ,  G02B21/36 ,  H01L21/67 ,  H01L21/66

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

公开(公告)号：US20180372652A1

公开(公告)日：2018-12-27

申请号：US15568958

申请日：2017-08-23

Applicant: KLA-Tencor Corporation

Inventor： Vincent Immer ,  Tal Marciano ,  Etay Lavert

IPC: G01N21/95 ,  G02B21/00 ,  G02B21/06 ,  G02B21/18 ,  H01L21/67 ,  H01L21/66 ,  G02B21/36 ,  G01J3/453 ,  G01N21/956

CPC classification number: G01N21/9501 ,  G01J3/453 ,  G01N21/31 ,  G01N21/55 ,  G01N21/956 ,  G02B21/0016 ,  G02B21/0056 ,  G02B21/06 ,  G02B21/082 ,  G02B21/18 ,  G02B21/365 ,  G03F7/70633 ,  H01L21/67259 ,  H01L22/12

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.

公开(公告)号：US20180301385A1

公开(公告)日：2018-10-18

申请号：US15576811

申请日：2017-10-24

Applicant: KLA-Tencor Corporation

Inventor： Naomi Ittah ,  Nadav Gutman ,  Eran Amit ,  Vincent Immer ,  Einat Peled

IPC: H01L21/66 ,  G01B11/14 ,  G01B11/26 ,  H01L21/67

Abstract: A method of overlay control in silicon wafer manufacturing comprises firstly locating a target comprising a diffraction grating on a wafer layer; and then measuring the alignment of patterns in successive layers of the wafer. The location of the target may be done by the pupil camera rather than a vision camera by scanning the target to obtain pupil images at different locations along a first axis. The pupil images may comprise a first order diffraction pattern for each location. A measurement of signal intensity in the first order diffraction pattern is then obtained for each location. The variation of signal intensity with location along each axis is then analyzed to calculate the location of a feature in the target.

公开(公告)号：US10761034B2

公开(公告)日：2020-09-01

申请号：US15568958

申请日：2017-08-23

Applicant: KLA-Tencor Corporation

Inventor： Vincent Immer ,  Tal Marciano ,  Etay Lavert

IPC: G01N21/55 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01N21/31 ,  G02B21/00 ,  G02B21/08 ,  G01J3/453 ,  G02B21/06 ,  G02B21/18 ,  G02B21/36 ,  H01L21/67 ,  H01L21/66

Abstract: A device and method for expediting spectral measurement in metrological activities during semiconductor device fabrication through interferometric spectroscopy of white light illumination during calibration, overlay, and recipe creation.