公开(公告)号：US20150006097A1

公开(公告)日：2015-01-01

申请号：US14312568

申请日：2014-06-23

申请人： KLA-Tencor Corporation

发明人： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

摘要： Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

摘要翻译： 本文介绍了基于最终设备性能预测的半导体器件制造过程控制和产量管理的方法和系统。 估计的设备性能指标值是根据一个或多个设备性能模型计算的，该模型将过程中能够测量的参数值链接到最终设备性能指标。 在一些示例中，器件性能度量的估计值基于未完成的多层晶片的至少一个结构特征和至少一个带结构特征。 在一些示例中，对正在处理的设备是否将在最终设备性能测试中失败的预测是基于最终设备性能度量的估计值与指定值之间的差异。 在一些示例中，至少部分地基于差异来确定一个或多个后续处理步骤中的调整。

公开(公告)号：US10079183B2

公开(公告)日：2018-09-18

申请号：US14312568

申请日：2014-06-23

申请人： KLA-Tencor Corporation

发明人： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

IPC分类号： G01N21/21 ,  H01L21/66

CPC分类号： H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

摘要： Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

公开(公告)号：US08711349B2

公开(公告)日：2014-04-29

申请号：US13626023

申请日：2012-09-25

申请人： KLA-Tencor Corporation

发明人： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie Ye ,  Torsten Kaack ,  Qiang Zhao

IPC分类号： G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

摘要翻译： 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

公开(公告)号：US20130083320A1

公开(公告)日：2013-04-04

申请号：US13626023

申请日：2012-09-25

申请人： KLA-TENCOR CORPORATION

发明人： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie (Julien) Ye ,  Torsten Kaack ,  Qiang Zhao

IPC分类号： G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

摘要翻译： 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。