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公开(公告)号：US10079183B2
公开(公告)日：2018-09-18
申请号：US14312568
申请日：2014-06-23
发明人： Xiang Gao , Philip D. Flanner, III , Leonid Poslavsky , Ming Di , Qiang Zhao , Scott Penner
CPC分类号： H01L22/12 , G01N21/211 , G01N2021/213 , H01L22/20
摘要： Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.
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公开(公告)号：US20150199463A1
公开(公告)日：2015-07-16
申请号：US14594917
申请日：2015-01-12
发明人： Jonathan Iloreta , Matthew A. Laffin , Leonid Poslavsky , Torsten Kaack , Qiang Zhao , Lie-Quan Lee
IPC分类号： G06F17/50
CPC分类号： H01L22/12
摘要： Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.
摘要翻译： 提出了基于可重复使用的参数模型生成复杂设备结构测量模型的方法和工具。 采用这些模型的计量系统被配置为测量与不同半导体制造工艺相关联的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。
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3.发明申请公开(公告)号：US20140019097A1
公开(公告)日：2014-01-16
申请号：US13935275
申请日：2013-07-03
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/70 , G03F7/70608 , G03F7/70625
摘要： Structural parameters of a specimen are determined by fitting models of the response of the specimen to measurements collected by different measurement techniques in a combined analysis. Models of the response of the specimen to at least two different measurement technologies share at least one common geometric parameter. In some embodiments, a model building and analysis engine performs x-ray and optical analyses wherein at least one common parameter is coupled during the analysis. The fitting of the response models to measured data can be done sequentially, in parallel, or by a combination of sequential and parallel analyses. In a further aspect, the structure of the response models is altered based on the quality of the fit between the models and the corresponding measurement data. For example, a geometric model of the specimen is restructured based on the fit between the response models and corresponding measurement data.
摘要翻译： 样本的结构参数是通过将样本的响应拟合到通过不同测量技术在综合分析中收集的测量结果来确定的。 样本对至少两种不同测量技术的响应模型共享至少一个常见的几何参数。 在一些实施例中，模型构建和分析引擎执行x射线和光学分析，其中在分析期间耦合至少一个公共参数。 响应模型对测量数据的拟合可以顺序，并行或顺序和并行分析的组合进行。 在另一方面，响应模型的结构基于模型与相应测量数据之间的拟合质量而改变。 例如，基于响应模型和对应的测量数据之间的拟合来重组样本的几何模型。
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公开(公告)号：US10458912B2
公开(公告)日：2019-10-29
申请号：US15649843
申请日：2017-07-14
IPC分类号： G01B11/30 , G01N21/47 , G01N21/95 , G01B11/24 , G03F7/20 , G01N21/21 , G01N21/956 , G01N21/88
摘要： Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement. In another aspect, the characterization of the optical dispersion of one or more materials comprising the structure under measurement depends on the geometry of the structure.
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公开(公告)号：US09595481B1
公开(公告)日：2017-03-14
申请号：US14464640
申请日：2014-08-20
发明人： Natalia Malkova , Leonid Poslavsky , Ming Di , Qiang Zhao , Dawei Hu
CPC分类号： H01L22/12 , G01N21/211 , G01N21/8422 , G01N21/9501 , G01N2021/8438 , G01N2021/95676 , G01R31/2601
摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.
摘要翻译： 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学分散模型包括具有对未完成的多层半导体晶片的层的带隙敏感的连续第一导数的连续Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。
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6.发明申请Calculated Electrical Performance Metrics For Process Monitoring And Yield Management 审中-公开用于过程监控和产量管理的计算电气性能指标公开(公告)号：US20150006097A1
公开(公告)日：2015-01-01
申请号：US14312568
申请日：2014-06-23
发明人： Xiang Gao , Philip D. Flanner, III , Leonid Poslavsky , Ming Di , Qiang Zhao , Scott Penner
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , G01N21/211 , G01N2021/213 , H01L22/20
摘要： Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.
摘要翻译： 本文介绍了基于最终设备性能预测的半导体器件制造过程控制和产量管理的方法和系统。 估计的设备性能指标值是根据一个或多个设备性能模型计算的，该模型将过程中能够测量的参数值链接到最终设备性能指标。 在一些示例中，器件性能度量的估计值基于未完成的多层晶片的至少一个结构特征和至少一个带结构特征。 在一些示例中，对正在处理的设备是否将在最终设备性能测试中失败的预测是基于最终设备性能度量的估计值与指定值之间的差异。 在一些示例中，至少部分地基于差异来确定一个或多个后续处理步骤中的调整。
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公开(公告)号：US10732520B1
公开(公告)日：2020-08-04
申请号：US16417085
申请日：2019-05-20
发明人： Meng Cao , Lie-Quan Lee , Qiang Zhao , Heyin Li , Mengmeng Ye
摘要： Methods and systems for optimizing a set of measurement library control parameters for a particular metrology application are presented herein. Measurement signals are collected from one or more metrology targets by a target measurement system. Values of user selected parameters of interest are resolved by fitting a pre-computed measurement library function to the measurement signals for a given set of library control parameters. Values of one or more library control parameters are optimized such that differences between the values of the parameters of interest estimated by the library based measurement and reference values associated with trusted measurements of the parameters of interest are minimized. The optimization of the library control parameter values is performed without recalculating the pre-computed measurement library. Subsequent library based measurements are performed by the target measurement system using the optimized set of measurement library control parameters with improved measurement performance.
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公开(公告)号：US10410935B1
公开(公告)日：2019-09-10
申请号：US15428835
申请日：2017-02-09
发明人： Natalia Malkova , Leonid Poslavsky , Ming Di , Qiang Zhao , Dawei Hu
IPC分类号： H01L21/66 , G01N21/27 , G01R31/28 , G01R31/308
摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.
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9.发明申请公开(公告)号：US20180059019A1
公开(公告)日：2018-03-01
申请号：US15649843
申请日：2017-07-14
CPC分类号： G01N21/4788 , G01B11/24 , G01B11/30 , G01B11/303 , G01B2210/56 , G01N21/211 , G01N21/9501 , G01N21/9515 , G01N21/956 , G01N2021/8883 , G03F7/70616 , G03F7/70625
摘要： Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement. In another aspect, the characterization of the optical dispersion of one or more materials comprising the structure under measurement depends on the geometry of the structure.
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公开(公告)号：US08711349B2
公开(公告)日：2014-04-29
申请号：US13626023
申请日：2012-09-25
发明人： Xiang Gao , Philip D. Flanner, III , Leonid Poslavsky , Zhiming Jiang , Jun-Jie Ye , Torsten Kaack , Qiang Zhao
IPC分类号： G01N21/95
CPC分类号： G01N21/9501 , G01N21/211 , G01N21/8422 , G01N21/8851 , H01L22/12
摘要： Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
摘要翻译： 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。
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