High accuracy of relative defect locations for repeater analysis

    公开(公告)号:US11067516B2

    公开(公告)日:2021-07-20

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    High accuracy of relative defect locations for repeater analysis

    公开(公告)号:US10365232B2

    公开(公告)日:2019-07-30

    申请号:US15939278

    申请日:2018-03-29

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    Dynamic Care Areas for Defect Detection
    4.
    发明申请

    公开(公告)号:US20180276808A1

    公开(公告)日:2018-09-27

    申请号:US15858264

    申请日:2017-12-29

    Abstract: Systems and methods of a two-pass inspection methodology that dynamically creates micro care areas for inspection of repeater defects. Micro care areas can be formed around each location of a repeater defect. After inspection, additional repeater defects in the micro care areas can be identified. Attributes of the repeater defects can be compared and any repeater defects with attributes that deviate from an expected group attribute distribution can be classified as nuisance.

    HIGH ACCURACY OF RELATIVE DEFECT LOCATIONS FOR REPEATER ANALYSIS

    公开(公告)号:US20200072763A1

    公开(公告)日:2020-03-05

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    HIGH ACCURACY OF RELATIVE DEFECT LOCATIONS FOR REPEATER ANALYSIS

    公开(公告)号:US20180328860A1

    公开(公告)日:2018-11-15

    申请号:US15939278

    申请日:2018-03-29

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

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