System and Method for Aligning Semiconductor Device Reference Images and Test Images

    公开(公告)号:US20190139208A1

    公开(公告)日:2019-05-09

    申请号:US15837582

    申请日:2017-12-11

    Abstract: A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.

    Wafer Defect Discovery
    2.
    发明申请
    Wafer Defect Discovery 有权
    晶圆缺陷发现

    公开(公告)号:US20160123898A1

    公开(公告)日:2016-05-05

    申请号:US14931226

    申请日:2015-11-03

    Abstract: Systems and methods for discovering defects on a wafer are provided. One method includes detecting defects on a wafer by applying a threshold to output generated by a detector in a first scan of the wafer and determining values for features of the detected defects. The method also includes automatically ranking the features, identifying feature cut-lines to group the defect into bins, and, for each of the bins, determining one or more parameters that if applied to the values for the features of the defects in each of the bins will result in a predetermined number of the defects in each of the bins. The method also includes applying the one or more determined parameters to the output generated by the detector in a second scan of the wafer to generate a defect population that has a predetermined defect count and is diversified in the values for the features.

    Abstract translation: 提供了发现晶片缺陷的系统和方法。 一种方法包括通过在晶片的第一次扫描中施加由检测器产生的输出的阈值来检测晶片上的缺陷,并确定检测到的缺陷的特征的值。 该方法还包括对特征进行自动排序,识别特征切割线以将缺陷分组成箱,并且对于每个箱,确定一个或多个参数,如果应用于每个中的缺陷的特征的值 箱将导致每个箱中预定数量的缺陷。 该方法还包括将一个或多个确定的参数应用于在晶片的第二次扫描中由检测器产生的输出,以产生具有预定缺陷计数并且在特征值中多样化的缺陷群体。

    Array Mode Repeater Detection
    3.
    发明申请
    Array Mode Repeater Detection 有权
    阵列模式中继器检测

    公开(公告)号:US20160061749A1

    公开(公告)日:2016-03-03

    申请号:US14674856

    申请日:2015-03-31

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括从通过用检查系统扫描晶片产生的帧图像为晶片上的晶片中的晶片的阵列区域的至少一部分生成测试图像。 该方法还包括从通过晶片扫描生成的帧图像生成阵列区域中的单元的参考图像。 另外,该方法包括通过从测试图像的一部分中减去参考图像来确定模具中的阵列区域的至少一部分中的至少一个单元的差分图像, 对应于至少一个小区。 该方法还包括基于差分图像来检测至少一个单元中的晶片上的缺陷。

    HIGH ACCURACY OF RELATIVE DEFECT LOCATIONS FOR REPEATER ANALYSIS

    公开(公告)号:US20200072763A1

    公开(公告)日:2020-03-05

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

    System and method for aligning semiconductor device reference images and test images

    公开(公告)号:US10572991B2

    公开(公告)日:2020-02-25

    申请号:US15837582

    申请日:2017-12-11

    Abstract: A method may include, but is not limited to, receiving a plurality of reference images of a wafer. The method may include, but is not limited to, receiving the plurality of test images of the wafer. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a coarse alignment process. The method may include, but is not limited to, aligning the plurality of reference images and the plurality of test images via a fine alignment process after alignment via the coarse alignment process. The fine alignment process may include measuring individual offsets and correcting individual offset data between at least one of the plurality of reference images and the plurality of test images.

    Repeater detection
    6.
    发明授权

    公开(公告)号:US09766187B2

    公开(公告)日:2017-09-19

    申请号:US14838091

    申请日:2015-08-27

    CPC classification number: G01N21/9501 G01N21/00 G01N21/95 G01N21/95607

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

    Array mode repeater detection
    7.
    发明授权

    公开(公告)号:US09766186B2

    公开(公告)日:2017-09-19

    申请号:US14674856

    申请日:2015-03-31

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system. The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

    Wafer Defect Discovery
    8.
    发明申请
    Wafer Defect Discovery 审中-公开
    晶圆缺陷发现

    公开(公告)号:US20170076911A1

    公开(公告)日:2017-03-16

    申请号:US15359589

    申请日:2016-11-22

    Abstract: Systems and methods for discovering defects on a wafer are provided. One method includes detecting defects on a wafer by applying a threshold to output generated by a detector in a first scan of the wafer and determining values for features of the detected defects. The method also includes automatically ranking the features, identifying feature cut-lines to group the defect into bins, and, for each of the bins, determining one or more parameters that if applied to the values for the features of the defects in each of the bins will result in a predetermined number of the defects in each of the bins. The method also includes applying the one or more determined parameters to the output generated by the detector in a second scan of the wafer to generate a defect population that has a predetermined defect count and is diversified in the values for the features.

    Abstract translation: 提供了发现晶片缺陷的系统和方法。 一种方法包括通过在晶片的第一次扫描中施加由检测器产生的输出的阈值来检测晶片上的缺陷,并确定检测到的缺陷的特征的值。 该方法还包括对特征进行自动排序,识别特征切割线以将缺陷分组成箱,并且对于每个箱,确定一个或多个参数,如果应用于每个中的缺陷的特征的值 箱将导致每个箱中预定数量的缺陷。 该方法还包括将一个或多个确定的参数应用于在晶片的第二次扫描中由检测器产生的输出,以产生具有预定缺陷计数并且在特征值中多样化的缺陷群体。

    Repeater Detection
    9.
    发明申请
    Repeater Detection 有权
    中继器检测

    公开(公告)号:US20160061745A1

    公开(公告)日:2016-03-03

    申请号:US14838091

    申请日:2015-08-27

    CPC classification number: G01N21/9501 G01N21/00 G01N21/95 G01N21/95607

    Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating test image(s) for at least a portion of an array region in die(s) on a wafer from frame image(s) generated by scanning the wafer with an inspection system.The method also includes generating a reference image for cell(s) in the array region from frame images generated by the scanning of the wafer. In addition, the method includes determining difference image(s) for at least one cell in the at least the portion of the array region in the die(s) by subtracting the reference image from portion(s) of the test image(s) corresponding to the at least one cell. The method further includes detecting defects on the wafer in the at least one cell based on the difference image(s).

    Abstract translation: 提供了用于检测晶片上的缺陷的系统和方法。 一种方法包括从通过用检查系统扫描晶片产生的帧图像为晶片上的晶片中的晶片的阵列区域的至少一部分生成测试图像。 该方法还包括从通过晶片扫描生成的帧图像生成阵列区域中的单元的参考图像。 此外,该方法包括通过从测试图像的一部分中减去参考图像来确定模具中的阵列区域的至少一部分中的至少一个单元的差分图像, 对应于至少一个小区。 该方法还包括基于差分图像来检测至少一个单元中的晶片上的缺陷。

    High accuracy of relative defect locations for repeater analysis

    公开(公告)号:US11067516B2

    公开(公告)日:2021-07-20

    申请号:US16613787

    申请日:2018-05-14

    Abstract: Methods and systems for transforming positions of defects detected on a wafer are provided. One method includes aligning output of an inspection subsystem for a first frame in a first swath in a first die in a first instance of a multi-die reticle printed on the wafer to the output for corresponding frames, swaths, and dies in other reticle instances printed on the wafer. The method also includes determining different swath coordinate offsets for each of the frames, respectively, in the other reticle instances based on the swath coordinates of the output for the frames and the corresponding frames aligned thereto and applying one of the different swath coordinate offsets to the swath coordinates reported for the defects based on the other reticle instances in which they are detected thereby transforming the swath coordinates for the defects from swath coordinates in the other reticle instances to the first reticle instance.

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