公开(公告)号：US20150263210A1

公开(公告)日：2015-09-17

申请号：US14428349

申请日：2012-12-26

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Tae Won Kim ,  Jae Cheol Park ,  Ho Sung Kim ,  Ik Hyun Oh ,  Jeon Ryang Lee ,  Bo Ra Koo ,  Seung Hyoun Lee

IPC: H01L31/0749 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01L31/0749 ,  C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  H01J37/3426 ,  H01J37/3429 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: Provided are a CIS/CGS/CIGS thin-film manufacturing method and a solar cell manufactured by using the same. The CIS/CGS/CIGS thin-film manufacturing method enables CIS, CGS, and CIGS thin-films through depositing an electrode layer on a substrate and depositing a light absorber layer by sputtering a single target of each of CIS including copper (Cu), indium (In), and selenium (Se) and CGS copper (Cu), gallium (Ga) and selenium (Se). In addition, a solar cell having excellent structural, optical and electrical properties is prepared by using the same. Thus, a thin-film can be prepared by depositing a CIG, CGS, or CIGS light absorber layer with a single sputtering process by using a single target of each of CIS (CuInSe2) and CGS (CuGaSe2), to thereby enable to manufacture thin-films of various characteristics according to a control of a composition ratio of In and Ga as well as simplification of the process, and to thus provide a very favorable effect on the economics and efficiency.

Abstract translation: 提供了CIS / CGS / CIGS薄膜制造方法和使用该方法制造的太阳能电池。 CIS / CGS / CIGS薄膜制造方法通过在基板上沉积电极层并且通过溅射CIS中的每一个的单个靶沉积光吸收层来实现CIS，CGS和CIGS薄膜，包括铜（Cu）， 铟（In）和硒（Se）和CGS铜（Cu），镓（Ga）和硒（Se）。 此外，通过使用具有优异的结构，光学和电学性能的太阳能电池。 因此，可以通过使用CIS（CuInSe 2）和CGS（CuGaSe 2）中的每一个的单个靶沉积具有单次溅射工艺的CIG，CGS或CIGS光吸收层来制备薄膜，从而能够制造薄 - 根据In和Ga的组成比的控制以及工艺的简化，具有各种特性的膜，从而对经济性和效率提供非常有利的影响。