公开(公告)号：US20150263210A1

公开(公告)日：2015-09-17

申请号：US14428349

申请日：2012-12-26

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Tae Won Kim ,  Jae Cheol Park ,  Ho Sung Kim ,  Ik Hyun Oh ,  Jeon Ryang Lee ,  Bo Ra Koo ,  Seung Hyoun Lee

IPC: H01L31/0749 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01L31/0749 ,  C23C14/0623 ,  C23C14/34 ,  C23C14/3464 ,  H01J37/3426 ,  H01J37/3429 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: Provided are a CIS/CGS/CIGS thin-film manufacturing method and a solar cell manufactured by using the same. The CIS/CGS/CIGS thin-film manufacturing method enables CIS, CGS, and CIGS thin-films through depositing an electrode layer on a substrate and depositing a light absorber layer by sputtering a single target of each of CIS including copper (Cu), indium (In), and selenium (Se) and CGS copper (Cu), gallium (Ga) and selenium (Se). In addition, a solar cell having excellent structural, optical and electrical properties is prepared by using the same. Thus, a thin-film can be prepared by depositing a CIG, CGS, or CIGS light absorber layer with a single sputtering process by using a single target of each of CIS (CuInSe2) and CGS (CuGaSe2), to thereby enable to manufacture thin-films of various characteristics according to a control of a composition ratio of In and Ga as well as simplification of the process, and to thus provide a very favorable effect on the economics and efficiency.

Abstract translation: 提供了CIS / CGS / CIGS薄膜制造方法和使用该方法制造的太阳能电池。 CIS / CGS / CIGS薄膜制造方法通过在基板上沉积电极层并且通过溅射CIS中的每一个的单个靶沉积光吸收层来实现CIS，CGS和CIGS薄膜，包括铜（Cu）， 铟（In）和硒（Se）和CGS铜（Cu），镓（Ga）和硒（Se）。 此外，通过使用具有优异的结构，光学和电学性能的太阳能电池。 因此，可以通过使用CIS（CuInSe 2）和CGS（CuGaSe 2）中的每一个的单个靶沉积具有单次溅射工艺的CIG，CGS或CIGS光吸收层来制备薄膜，从而能够制造薄 - 根据In和Ga的组成比的控制以及工艺的简化，具有各种特性的膜，从而对经济性和效率提供非常有利的影响。

公开(公告)号：US10395845B2

公开(公告)日：2019-08-27

申请号：US15394993

申请日：2016-12-30

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Gi Seok Heo ,  Tae Won Kim ,  Jae Cheol Park ,  Kwang Young Kim

IPC: B32B15/04 ,  B32B17/06 ,  H01G9/20 ,  C23C14/08 ,  H01L51/44 ,  C23C14/02 ,  C23C14/04 ,  C23C14/20 ,  C23C28/00 ,  H01B1/08 ,  C23C14/35

Abstract: A flexible Ti—In—Zn—O transparent electrode for a dye-sensitized solar cell includes a flexible transparent substrate, and a Ti—In—Zn—O thin-film on the flexible transparent substrate. The Ti—In—Zn—O thin-film has an amorphous structure. The flexible transparent electrode, despite being deposited at room or low temperature, has low surface resistance, high conductivity and transmittance, superior resistance against external bending, improved surface characteristics and better surface roughness performance.