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公开(公告)号:US20240091759A1
公开(公告)日:2024-03-21
申请号:US18468625
申请日:2023-09-15
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Jong Min KIM , Sang Hoon KIM , Chang Kyu HWANG , Seung Yong LEE , So Hye CHO , Jae Won CHOI
CPC classification number: B01J37/349 , B01J21/18 , B01J37/0217
Abstract: Disclosed herein is a method of depositing a transition metal single-atom catalyst including preparing a carbon carrier, and depositing a transition metal single-atom catalyst on the carbon carrier, in which the carbon carrier is surface-treated by an oxidation process, and wherein the deposition is carried out by an arc plasma process.
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公开(公告)号:US20240103362A1
公开(公告)日:2024-03-28
申请号:US18470084
申请日:2023-09-19
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Jong Min KIM , Seung Yong LEE , So Hye CHO , Ho Seong JANG , Jae Won CHOI , Chang Kyu HWANG
CPC classification number: G03F7/0002 , B82Y30/00 , B82Y40/00
Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.
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