公开(公告)号：US20140196775A1

公开(公告)日：2014-07-17

申请号：US14026426

申请日：2013-09-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji Yeong LEE ,  Myoung Woon MOON ,  Won Kyung SEONG ,  Jong Ku PARK ,  Cheol Woong YANG ,  So Hye CHO ,  Kwang Ryeol LEE

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/0296

CPC classification number: H01L31/035227 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.

Abstract translation: 根据本公开的一个示例性实施方案的制造CIGS纳米棒或纳米线的方法包括沉积制备步骤，其放置包括铜，铟，镓和硒的原料和基底，以及将CIGS纳米棒或纳米线生长的沉积步骤 通过将载气以恒定的流量流过的反应器的内部温度在850〜1000℃的温度范围内保持基板。根据该方法，使用Cu（In，Ga）Se 2纳米棒或纳米线 作为具有基本均匀组成的直接过渡型半导体材料，可以制造高结晶度和高吸光率。