公开(公告)号：US20140116936A1

公开(公告)日：2014-05-01

申请号：US13973013

申请日：2013-08-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seong Jin KIM ,  Myoung Woon MOON ,  Kwang Ryeol LEE ,  Won Kyung SEONG ,  Wei DAI

IPC: B01D69/02 ,  B01D67/00

CPC classification number: B01D69/02 ,  B01D67/0072 ,  B01D71/021 ,  B01D2325/38 ,  B82Y40/00

Abstract: The manufacturing method of nano porous material according to an example of the present invention comprises: a preparing step to prepare a substrate; and a manufacturing step to prepare nano porous material with a network structure in which nanoclusters are connected to each other using plasma deposition through over 300 mTorr of working pressure. Using the manufacturing method, it is possible to form a nano porous material having desired surface energy without formation of additional coating layer as well as pores distributed both within and on the surface of the nano porous material with only one deposition process.

Abstract translation: 根据本发明实施例的纳米多孔材料的制造方法包括：准备基材的制备步骤; 以及制备具有网络结构的纳米多孔材料的制造步骤，其中纳米团簇通过超过300mTorr的工作压力的等离子体沉积彼此连接。 使用该制造方法，可以形成具有所需表面能的纳米多孔材料，而不形成另外的涂层以及仅在一个沉积工艺上分布在纳米多孔材料的表面内和表面上的孔。

公开(公告)号：US20140196775A1

公开(公告)日：2014-07-17

申请号：US14026426

申请日：2013-09-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Ji Yeong LEE ,  Myoung Woon MOON ,  Won Kyung SEONG ,  Jong Ku PARK ,  Cheol Woong YANG ,  So Hye CHO ,  Kwang Ryeol LEE

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/0296

CPC classification number: H01L31/035227 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.

Abstract translation: 根据本公开的一个示例性实施方案的制造CIGS纳米棒或纳米线的方法包括沉积制备步骤，其放置包括铜，铟，镓和硒的原料和基底，以及将CIGS纳米棒或纳米线生长的沉积步骤 通过将载气以恒定的流量流过的反应器的内部温度在850〜1000℃的温度范围内保持基板。根据该方法，使用Cu（In，Ga）Se 2纳米棒或纳米线 作为具有基本均匀组成的直接过渡型半导体材料，可以制造高结晶度和高吸光率。