公开(公告)号：US09684100B2

公开(公告)日：2017-06-20

申请号：US14825881

申请日：2015-08-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won Kook Choi ,  Dong Hee Park ,  Chang Hwan Wie ,  Do Kyung Hwang

IPC: G02B1/115 ,  G02B1/118

CPC classification number: G02B1/115 ,  G02B1/118 ,  Y10T428/24413

Abstract: Provided are an anti-reflection nano-coating structure and a method of manufacturing the same. The anti-reflection nano-coating structure has low dependency on incident light. The anti-reflection nano-coating structure has a normal-align nano-structure on the entire surface of the substrate regardless of curvature of the substrate by controlling a ratio of reactive gas during sputtering.

公开(公告)号：US20140264269A1

公开(公告)日：2014-09-18

申请号：US14355399

申请日：2012-10-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Won-Kook Choi ,  Dong Ick Son ,  Byoung Wook Kwon ,  Dong Hee Park

IPC: H01L33/06 ,  H01L33/26 ,  H01L33/00

CPC classification number: H01L33/06 ,  C09K11/54 ,  H01L33/005 ,  H01L33/26 ,  H01L51/0003 ,  H01L51/0045 ,  H01L51/502 ,  H05B33/10 ,  H05B33/14

Abstract: Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor, and a method of fabricating a light emitting diode by using the same. The light emitting diode according to the present invention has the advantages that it shows excellent power conversion efficiency, the cost for materials and equipments required for its fabrication can be reduced, its fabricating process is simple, and it is possible to mass-produce and enlarge the size of display based on a quantum dot light emitting diode. Further, the present invention relates to core-shell quantum dots that can be used in fabricating a light emitting diode with a different wavelength by using various multi-component metal oxide semiconductors and a fabricating method thereof.

Abstract translation: 公开了通过化学连接具有优异电性能的金属氧化物半导体的金属氧化物半导体 - 石墨烯核 - 壳量子点的方法，以及通过使用该方法制造发光二极管的方法。 根据本发明的发光二极管具有优异的功率转换效率，可以降低其制造所需的材料和设备的成本，其制造工艺简单，并且可以批量生产和扩大 基于量子点发光二极管的显示器的尺寸。 此外，本发明涉及可以通过使用各种多组分金属氧化物半导体制造具有不同波长的发光二极管的核 - 壳量子点及其制造方法。