公开(公告)号：US20220399353A1

公开(公告)日：2022-12-15

申请号：US17538747

申请日：2021-11-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Joon Young KWAK ,  Eunpyo PARK ,  Suyoun LEE ,  Inho KIM ,  Jong-Keuk PARK ,  Jaewook KIM ,  Jongkil PARK ,  YeonJoo JEONG

IPC: H01L27/11521 ,  H01L29/788 ,  H01L29/423 ,  H01L29/43 ,  H01L29/66

Abstract: A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.